Comprehensive 2D-carrier profiling of low-doping region by high-sensitivity scanning spreading resistance microscopy (SSRM) for power device applications

L. Zhang, M. Koike, M. Ono, S. Itai, K. Matsuzawa, S. Ono, W. Saito, M. Yamaguchi, Y. Hayase, K. Hara

研究成果: Contribution to journalArticle査読

2 被引用数 (Scopus)

抄録

Superjunction (SJ) MOSFETs with low on-resistance and high sustain voltage are widely used as main switching power devices. For the p/n-pillars of SJ-power devices, precise doping at low-doping region below 1016 cm- 3 concentrations is required, and thus high-sensitivity 2D-carrier profiling of the pillars is indispensable where conventional SCM is insufficient. Previously, we developed the high-vacuum SSRM enabling high-spatial resolution and site-specific 2D-carrier profiling. In this study, we investigated comprehensively the feasibility of applying SSRM to SJ-power devices at low doping below 1016 cm- 3, with both SJ-diodes and low-doping references. The bias dependence of SSRM was analyzed on SJ-diodes and was compared with T-CAD simulations, and both the p- and the n-pillars demonstrate Schottky-like behavior between the probe and the sample. Consequently, the pn-junction delineation also moved with applied bias. We also performed SSRM on reference-staircase structures with low-doping layers down to 1014 cm- 3 of p, n and p/n types, and comparison with SIMS and SRP confirmed the high sensitivity of SSRM. The Schottky contact of the probe-sample was found to be pronounced at low-doping region, particularly p-type doped region. Therefore, the bias polarity should be taken into account to obtain correct information at the low-doping region.

本文言語英語
ページ(範囲)1559-1563
ページ数5
ジャーナルMicroelectronics Reliability
55
9-10
DOI
出版ステータス出版済み - 8 2015
外部発表はい

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学
  • 凝縮系物理学
  • 安全性、リスク、信頼性、品質管理
  • 表面、皮膜および薄膜
  • 電子工学および電気工学

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