Computational investigation of relationship between shear stress and multicrystalline structure in silicon

Isao Takahashi, Noritaka Usami, Kentaro Kutsukake, Kohei Morishita, Kazuo Nakajima

研究成果: ジャーナルへの寄稿学術誌査読

18 被引用数 (Scopus)

抄録

We performed computational calculations by three-dimensional finite element analysis to investigate the relationship between the shear stress on slip planes and multicrystalline structural properties in Si, such as the grain orientation and the structure of the grain boundary. In our calculations, the change in multicrystalline structure is defined as the change in anisotropic elastic coefficient, which depends on the grain orientation. As a result, it becomes clear that the shear stress on slip planes depends on the grain orientation and concentrates near the grain boundary. Calculations in various multicrystalline structures reveal that controlling the growth direction in (100) or (110) has a great advantage for decreasing the shear stress on slip planes and resulting in the suppression of dislocation occurrence.

本文言語英語
論文番号04DP01
ジャーナルJapanese journal of applied physics
49
4 PART 2
DOI
出版ステータス出版済み - 4月 1 2010
外部発表はい

!!!All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(全般)

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