TY - JOUR
T1 - Conductive SiC ceramics fabricated by spark plasma sintering
AU - Kim, Kwang Joo
AU - Jang, Seung Hoon
AU - Kim, Young Wook
AU - Jang, Byung Koog
AU - Nishimura, Toshiyuki
N1 - Funding Information:
This work was supported by a National Research Foundation of Korea (NRF) grant funded by the Korean Government (MSIP) ( 2015R1A2A2A01004860 ). One of the authors (Y.-W. Kim) thanks Ms. Solip Jeong (University of Seoul) for preparing some of the SPS-SiC specimens.
Publisher Copyright:
© 2016 Elsevier Ltd and Techna Group S.r.l.
PY - 2016/11/15
Y1 - 2016/11/15
N2 - Bulk SiC ceramics were fabricated by spark plasma sintering, and the effects of Y2O3 addition on the structural and electrical properties were investigated. Raman spectroscopy revealed that SiC specimens with low Y2O3 content (0.01 and 0.05 wt%) contained a graphitic phase (1580 and 2710 cm−1) which was insignificant for high Y2O3 content (1.0 and 5.0 wt%). Carbon-rich SiC specimens exhibited p-type conduction character, while others exhibited n-type character. The p- and n-type SiC specimens had electrical resistivities around 10−2 Ω cm but exhibited photoluminescence spectra quite different from each other. The p-type character is primarily attributable to silicon vacancies (VSi), while the n-type character is ascribed to nitrogen substitution in carbon sites (NC) of the zincblende lattice. The change in conduction type with yttria addition in the SiC specimen can be understood in terms of a competition between the densities of VSi and NC.
AB - Bulk SiC ceramics were fabricated by spark plasma sintering, and the effects of Y2O3 addition on the structural and electrical properties were investigated. Raman spectroscopy revealed that SiC specimens with low Y2O3 content (0.01 and 0.05 wt%) contained a graphitic phase (1580 and 2710 cm−1) which was insignificant for high Y2O3 content (1.0 and 5.0 wt%). Carbon-rich SiC specimens exhibited p-type conduction character, while others exhibited n-type character. The p- and n-type SiC specimens had electrical resistivities around 10−2 Ω cm but exhibited photoluminescence spectra quite different from each other. The p-type character is primarily attributable to silicon vacancies (VSi), while the n-type character is ascribed to nitrogen substitution in carbon sites (NC) of the zincblende lattice. The change in conduction type with yttria addition in the SiC specimen can be understood in terms of a competition between the densities of VSi and NC.
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U2 - 10.1016/j.ceramint.2016.07.126
DO - 10.1016/j.ceramint.2016.07.126
M3 - Article
AN - SCOPUS:84994632823
SN - 0272-8842
VL - 42
SP - 17892
EP - 17896
JO - Ceramics International
JF - Ceramics International
IS - 15
ER -