Confinement induced decrease of the exciton-longitudinal optical phonon coupling in GaN quantum dots

Peter Ramvall, Tanaka Satoru, Shintaro Nomura, Philippe Riblet, Yoshinobu Aoyagi

研究成果: ジャーナルへの寄稿記事

30 引用 (Scopus)

抄録

We report on an investigation of the coupling between excitons and longitudinal optical phonons as a function of GaN quantum dot size. Photoluminescence measurements of the quantum dots from cryogenic temperatures up to above room temperature are presented. The experiments were performed on ensembles of AlN capped GaN quantum dots grown on an Al0.15Ga0.85N surface by means of metalorganic vapor phase epitaxy. The results are analyzed on the basis of a Bose-Einstein-type expression describing the exciton to longitudinal optical phonon coupling of the dots as a function of the lattice temperature. A reduction of the exciton to LO-phonon coupling with decreasing quantum dot size was found.

元の言語英語
ページ(範囲)1935-1937
ページ数3
ジャーナルApplied Physics Letters
75
発行部数13
DOI
出版物ステータス出版済み - 9 27 1999
外部発表Yes

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quantum dots
excitons
cryogenic temperature
vapor phase epitaxy
phonons
photoluminescence
room temperature
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

これを引用

Confinement induced decrease of the exciton-longitudinal optical phonon coupling in GaN quantum dots. / Ramvall, Peter; Satoru, Tanaka; Nomura, Shintaro; Riblet, Philippe; Aoyagi, Yoshinobu.

:: Applied Physics Letters, 巻 75, 番号 13, 27.09.1999, p. 1935-1937.

研究成果: ジャーナルへの寄稿記事

Ramvall, Peter ; Satoru, Tanaka ; Nomura, Shintaro ; Riblet, Philippe ; Aoyagi, Yoshinobu. / Confinement induced decrease of the exciton-longitudinal optical phonon coupling in GaN quantum dots. :: Applied Physics Letters. 1999 ; 巻 75, 番号 13. pp. 1935-1937.
@article{e250a76927a34dd2bd2fe1736d87cdb3,
title = "Confinement induced decrease of the exciton-longitudinal optical phonon coupling in GaN quantum dots",
abstract = "We report on an investigation of the coupling between excitons and longitudinal optical phonons as a function of GaN quantum dot size. Photoluminescence measurements of the quantum dots from cryogenic temperatures up to above room temperature are presented. The experiments were performed on ensembles of AlN capped GaN quantum dots grown on an Al0.15Ga0.85N surface by means of metalorganic vapor phase epitaxy. The results are analyzed on the basis of a Bose-Einstein-type expression describing the exciton to longitudinal optical phonon coupling of the dots as a function of the lattice temperature. A reduction of the exciton to LO-phonon coupling with decreasing quantum dot size was found.",
author = "Peter Ramvall and Tanaka Satoru and Shintaro Nomura and Philippe Riblet and Yoshinobu Aoyagi",
year = "1999",
month = "9",
day = "27",
doi = "10.1063/1.124876",
language = "English",
volume = "75",
pages = "1935--1937",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "13",

}

TY - JOUR

T1 - Confinement induced decrease of the exciton-longitudinal optical phonon coupling in GaN quantum dots

AU - Ramvall, Peter

AU - Satoru, Tanaka

AU - Nomura, Shintaro

AU - Riblet, Philippe

AU - Aoyagi, Yoshinobu

PY - 1999/9/27

Y1 - 1999/9/27

N2 - We report on an investigation of the coupling between excitons and longitudinal optical phonons as a function of GaN quantum dot size. Photoluminescence measurements of the quantum dots from cryogenic temperatures up to above room temperature are presented. The experiments were performed on ensembles of AlN capped GaN quantum dots grown on an Al0.15Ga0.85N surface by means of metalorganic vapor phase epitaxy. The results are analyzed on the basis of a Bose-Einstein-type expression describing the exciton to longitudinal optical phonon coupling of the dots as a function of the lattice temperature. A reduction of the exciton to LO-phonon coupling with decreasing quantum dot size was found.

AB - We report on an investigation of the coupling between excitons and longitudinal optical phonons as a function of GaN quantum dot size. Photoluminescence measurements of the quantum dots from cryogenic temperatures up to above room temperature are presented. The experiments were performed on ensembles of AlN capped GaN quantum dots grown on an Al0.15Ga0.85N surface by means of metalorganic vapor phase epitaxy. The results are analyzed on the basis of a Bose-Einstein-type expression describing the exciton to longitudinal optical phonon coupling of the dots as a function of the lattice temperature. A reduction of the exciton to LO-phonon coupling with decreasing quantum dot size was found.

UR - http://www.scopus.com/inward/record.url?scp=0000116707&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000116707&partnerID=8YFLogxK

U2 - 10.1063/1.124876

DO - 10.1063/1.124876

M3 - Article

AN - SCOPUS:0000116707

VL - 75

SP - 1935

EP - 1937

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 13

ER -