TY - JOUR
T1 - Consideration of growth process of diamond thin films in ambient oxygen by pulsed laser ablation of graphite
AU - Yoshitake, Tsuyoshi
AU - Nishiyama, Takashi
AU - Hara, Takeshi
AU - Nagayama, Kunihito
N1 - Funding Information:
The film preparation using the ArF excimer laser was carried out at the Institute for Ionized Gas and Laser Research, Kyushu University, and the Raman spectrum measurements were made using equipment at the Center of Advanced Instrumental Analysis, Kyushu University. This work is supported by the Nippon Sheet Glass Foundation for Materials Science and Engineering.
Copyright:
Copyright 2019 Elsevier B.V., All rights reserved.
PY - 2002
Y1 - 2002
N2 - Diamond thin films were grown on diamond (1 0 0) substrates in oxygen atmospheres by pulsed laser deposition (PLD) using a graphite target. In the optimum oxygen pressure of 5 × 10 -2 Torr, the sp 2 bonding fractions can be etched away preferentially and the sp 3 bonding fractions remain predominantly on the substrate. At substrate temperatures lower than 400 °C, amorphous carbon generates. At higher than 400 °C, diamond crystallites begin to generate in the amorphous carbon. At the suitable substrate temperatures between 550 and 650 °C, single-phase diamond films consisting of diamond crystal with diameters of 1-5 μm could be grown. Based on the results, the growth process of diamond thin film by PLD is considered.
AB - Diamond thin films were grown on diamond (1 0 0) substrates in oxygen atmospheres by pulsed laser deposition (PLD) using a graphite target. In the optimum oxygen pressure of 5 × 10 -2 Torr, the sp 2 bonding fractions can be etched away preferentially and the sp 3 bonding fractions remain predominantly on the substrate. At substrate temperatures lower than 400 °C, amorphous carbon generates. At higher than 400 °C, diamond crystallites begin to generate in the amorphous carbon. At the suitable substrate temperatures between 550 and 650 °C, single-phase diamond films consisting of diamond crystal with diameters of 1-5 μm could be grown. Based on the results, the growth process of diamond thin film by PLD is considered.
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U2 - 10.1016/S0169-4332(02)00423-3
DO - 10.1016/S0169-4332(02)00423-3
M3 - Conference article
AN - SCOPUS:0036428276
SN - 0169-4332
VL - 197-198
SP - 352
EP - 356
JO - Applied Surface Science
JF - Applied Surface Science
T2 - Cola 2001
Y2 - 1 October 2001 through 1 October 2001
ER -