Consideration of the formation mechanism of an Al2O3-HfO2 eutectic film on a SiC substrate

Kyosuke Seya, Shunkichi Ueno, Toshiyuki Nishimura, Byungkoog Jang

研究成果: ジャーナルへの寄稿記事

抄録

An Al2O3-HfO2 eutectic EBC film was prepared on a SiC substrate by using the electric furnace heating and the optical zone melting methods. All of Al2O3 phase disappeared during the heating step at a temperature below the melting point, and all of the HfO2 phase reacted with the carbon and boron, which are included in SiC bulk as sintering agents, during the heating step at a temperature below the melting point. The thermal decomposition of the SiC phase, the reduction reaction of Al2O3 phase, the vaporization of the Al2O3 component, the reduction reaction of HfO2 and the formation of the HfC phase occurred at a temperature below the melting point. However, a highly dense HfC phase was formed on the SiC substrate. A rapid heating process becomes possible by using the optical zone melting method. A solidified film that was composed of a highly dense HfC layer as the intermediate layer and the Al2O3-HfO2 eutectic structure layer as the top coat was obtained by using the optical zone melting method.

元の言語英語
ページ(範囲)73-76
ページ数4
ジャーナルJournal of the Korean Physical Society
68
発行部数1
DOI
出版物ステータス出版済み - 1 1 2016

Fingerprint

eutectics
zone melting
melting points
heating
electric furnaces
thermal decomposition
temperature
sintering
boron
carbon

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

これを引用

Consideration of the formation mechanism of an Al2O3-HfO2 eutectic film on a SiC substrate. / Seya, Kyosuke; Ueno, Shunkichi; Nishimura, Toshiyuki; Jang, Byungkoog.

:: Journal of the Korean Physical Society, 巻 68, 番号 1, 01.01.2016, p. 73-76.

研究成果: ジャーナルへの寄稿記事

Seya, Kyosuke ; Ueno, Shunkichi ; Nishimura, Toshiyuki ; Jang, Byungkoog. / Consideration of the formation mechanism of an Al2O3-HfO2 eutectic film on a SiC substrate. :: Journal of the Korean Physical Society. 2016 ; 巻 68, 番号 1. pp. 73-76.
@article{4b9ee0d9569c4228bd87a8803cd643a7,
title = "Consideration of the formation mechanism of an Al2O3-HfO2 eutectic film on a SiC substrate",
abstract = "An Al2O3-HfO2 eutectic EBC film was prepared on a SiC substrate by using the electric furnace heating and the optical zone melting methods. All of Al2O3 phase disappeared during the heating step at a temperature below the melting point, and all of the HfO2 phase reacted with the carbon and boron, which are included in SiC bulk as sintering agents, during the heating step at a temperature below the melting point. The thermal decomposition of the SiC phase, the reduction reaction of Al2O3 phase, the vaporization of the Al2O3 component, the reduction reaction of HfO2 and the formation of the HfC phase occurred at a temperature below the melting point. However, a highly dense HfC phase was formed on the SiC substrate. A rapid heating process becomes possible by using the optical zone melting method. A solidified film that was composed of a highly dense HfC layer as the intermediate layer and the Al2O3-HfO2 eutectic structure layer as the top coat was obtained by using the optical zone melting method.",
author = "Kyosuke Seya and Shunkichi Ueno and Toshiyuki Nishimura and Byungkoog Jang",
year = "2016",
month = "1",
day = "1",
doi = "10.3938/jkps.68.73",
language = "English",
volume = "68",
pages = "73--76",
journal = "Journal of the Korean Physical Society",
issn = "0374-4884",
publisher = "Korean Physical Society",
number = "1",

}

TY - JOUR

T1 - Consideration of the formation mechanism of an Al2O3-HfO2 eutectic film on a SiC substrate

AU - Seya, Kyosuke

AU - Ueno, Shunkichi

AU - Nishimura, Toshiyuki

AU - Jang, Byungkoog

PY - 2016/1/1

Y1 - 2016/1/1

N2 - An Al2O3-HfO2 eutectic EBC film was prepared on a SiC substrate by using the electric furnace heating and the optical zone melting methods. All of Al2O3 phase disappeared during the heating step at a temperature below the melting point, and all of the HfO2 phase reacted with the carbon and boron, which are included in SiC bulk as sintering agents, during the heating step at a temperature below the melting point. The thermal decomposition of the SiC phase, the reduction reaction of Al2O3 phase, the vaporization of the Al2O3 component, the reduction reaction of HfO2 and the formation of the HfC phase occurred at a temperature below the melting point. However, a highly dense HfC phase was formed on the SiC substrate. A rapid heating process becomes possible by using the optical zone melting method. A solidified film that was composed of a highly dense HfC layer as the intermediate layer and the Al2O3-HfO2 eutectic structure layer as the top coat was obtained by using the optical zone melting method.

AB - An Al2O3-HfO2 eutectic EBC film was prepared on a SiC substrate by using the electric furnace heating and the optical zone melting methods. All of Al2O3 phase disappeared during the heating step at a temperature below the melting point, and all of the HfO2 phase reacted with the carbon and boron, which are included in SiC bulk as sintering agents, during the heating step at a temperature below the melting point. The thermal decomposition of the SiC phase, the reduction reaction of Al2O3 phase, the vaporization of the Al2O3 component, the reduction reaction of HfO2 and the formation of the HfC phase occurred at a temperature below the melting point. However, a highly dense HfC phase was formed on the SiC substrate. A rapid heating process becomes possible by using the optical zone melting method. A solidified film that was composed of a highly dense HfC layer as the intermediate layer and the Al2O3-HfO2 eutectic structure layer as the top coat was obtained by using the optical zone melting method.

UR - http://www.scopus.com/inward/record.url?scp=84958811395&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84958811395&partnerID=8YFLogxK

U2 - 10.3938/jkps.68.73

DO - 10.3938/jkps.68.73

M3 - Article

VL - 68

SP - 73

EP - 76

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

IS - 1

ER -