Contact resistance in Schottky contact gated-four-probe a-Si thin-film transistor

Reiji Hattori, Jerzy Kanicki

研究成果: Contribution to journalLetter査読

13 被引用数 (Scopus)

抄録

The source and drain electrode contact resistance of the hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) with a Schottky-barrier source/drain contact was measured using a gated-four-probe TFT structure. Typically its variation with the gate bias is considered to be independent of the gate bias but we observed that contact resistances decrease exponentially with increasing gate bias. Our experimental data are explained by a combination of the tunneling current through the Schottky barrier and the access source/drain contact TFT resistance.

本文言語英語
ページ(範囲)L907-L909
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
42
8 A
DOI
出版ステータス出版済み - 8 1 2003
外部発表はい

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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