TY - JOUR
T1 - Contactless measurement of electrical conductivity for bulk nanostructured silver prepared by high-pressure torsion
T2 - A study of the dissipation process of giant strain
AU - Mito, Masaki
AU - Shibayama, Keisuke
AU - Deguchi, Hiroyuki
AU - Tsuruta, Kazuki
AU - Tajiri, Takayuki
AU - Edalati, Kaveh
AU - Horita, Zenji
N1 - Funding Information:
This work was supported by MEXT KAKENHI, Grant-in-Aid for Scientific Research on Innovative Areas “Bulk Nanostructured Metals” No. 25102709, and Grant-in-Aid for Scientific Research (S) (No. 26220909). The HPT process was carried out in the International Research Center on Giant Straining for Advanced Materials (IRC-GSAM) at Kyushu University.
Publisher Copyright:
© 2017 Author(s).
PY - 2017/9/28
Y1 - 2017/9/28
N2 - We measured the electrical conductivity of bulk nanostructured silver prepared by high-pressure torsion (HPT) in a contactless manner by observing the AC magnetic susceptibility resulting from the eddy current, so that we could quantitatively analyze the dissipation process of the residual strain with sufficient time resolution as a function of temperature T and initial shear strain γ. The HPT process was performed at room temperature under a pressure of 6 GPa for revolutions N = 0-5, and we targeted a wide range of residual shear strains. The contactless measurement without electrode preparation enabled us to investigate both the fast and slow dissipation processes of the residual strain with sufficient time resolution, so that a systematic study of these processes became possible. The changes in the electrical conductivity as a function of N at room temperature were indeed consistent with changes in the Vickers microhardness; furthermore, they were also related to changes in structural parameters such as the preferred orientation, the interplanar distance, and the crystallite size. The dissipation process at N = 1, corresponding to γ a' 30, was the largest and the fastest. For N = 5, corresponding to γ a' 140, we considered the effects of grain boundaries, as well as those of dislocations. The strain dissipation was quite slow below T = 290 K. According to the analytical results, it became successful to conduct the quantitative evaluation of the strain dissipation at arbitrary temperatures: For instance, the relaxation times at T = 280 and 260 K were estimated to be 3.6 and 37 days, respectively.
AB - We measured the electrical conductivity of bulk nanostructured silver prepared by high-pressure torsion (HPT) in a contactless manner by observing the AC magnetic susceptibility resulting from the eddy current, so that we could quantitatively analyze the dissipation process of the residual strain with sufficient time resolution as a function of temperature T and initial shear strain γ. The HPT process was performed at room temperature under a pressure of 6 GPa for revolutions N = 0-5, and we targeted a wide range of residual shear strains. The contactless measurement without electrode preparation enabled us to investigate both the fast and slow dissipation processes of the residual strain with sufficient time resolution, so that a systematic study of these processes became possible. The changes in the electrical conductivity as a function of N at room temperature were indeed consistent with changes in the Vickers microhardness; furthermore, they were also related to changes in structural parameters such as the preferred orientation, the interplanar distance, and the crystallite size. The dissipation process at N = 1, corresponding to γ a' 30, was the largest and the fastest. For N = 5, corresponding to γ a' 140, we considered the effects of grain boundaries, as well as those of dislocations. The strain dissipation was quite slow below T = 290 K. According to the analytical results, it became successful to conduct the quantitative evaluation of the strain dissipation at arbitrary temperatures: For instance, the relaxation times at T = 280 and 260 K were estimated to be 3.6 and 37 days, respectively.
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U2 - 10.1063/1.4991430
DO - 10.1063/1.4991430
M3 - Article
AN - SCOPUS:85030172074
SN - 0021-8979
VL - 122
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 12
M1 - 125105
ER -