Continuous growth of SiC single crystal by the spray dried powder made of ultra-fine particle precursors

Y. Yamada, S. Nishizawa, S. Nakashima, K. Arai

研究成果: Contribution to journalConference article査読

抄録

We succeeded in continuous growth of SiC single crystal by CPD (Chemical Particle Deposition) method with the spray dried ultra-fine particle precursor powder. By the introduction of the spray dried spherical powder, we could clarify the mechanism of SiC single crystal growth by CPD method, through the observation of the deformation and the transformation of the spherical precursor powder into the epitaxial SiC grown layer on the seed crystal surface. The SiC layer grown by this method showed promising crystal quality indicated by the rocking curve with FWHM of 70-80 arcsec.

本文言語英語
ページ(範囲)131-134
ページ数4
ジャーナルMaterials Science Forum
457-460
I
DOI
出版ステータス出版済み - 1 1 2004
外部発表はい
イベントProceedings of the 10th International Conference on Silicon Carbide and Related Materials, ICSCRM 2003 - Lyon, フランス
継続期間: 10 5 200310 10 2003

All Science Journal Classification (ASJC) codes

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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