Control of crystallographic orientation and grain refinement in Bi 2Te3-based thermoelectric semiconductors by applying high pressure torsion

Maki Ashida, Takashi Hamachiyo, Kazuhiro Hasezaki, Hirotaka Matsunoshita, Masaaki Kai, Zenji Horita

    研究成果: 書籍/レポート タイプへの寄稿会議への寄与

    12 被引用数 (Scopus)

    抄録

    Prepared were p-type Bi2Te3-based thermoelectric semiconductors, having a grain-refined microstructure and a preferred orientation of anisotropic crystallographic structure. Disks with a nominal composition Bi0.5Sb1.5Te3.0 were cut from an ingot grown by the vertical Bridgman method (VBM) and deformed at 473 K under a pressure of 6.0 GPa by high pressure torsion (HPT). The crystal orientation was characterized with X-ray diffraction. The microstructures were characterized by using optical microscopy and scanning electron microscopy. It was found that the HPT disks had a fine and preferentially oriented grain compared to that of the VBM disks. Further, the power factor of the HPT disks was about twice as large as that of the VBM disks. These results indicate that HPT is effective for improving the thermoelectric properties of Bi2Te3-based thermoelectric semiconductors.

    本文言語英語
    ホスト出版物のタイトルMaterials Science Forum - Nanomaterials by Severe Plastic Deformation 4 - 4th International Conference on Nanomaterials by Severe Plastic Deformation
    出版社Trans Tech Publications Ltd
    ページ1006-1011
    ページ数6
    ISBN(電子版)978-0-87849-360-9
    出版ステータス出版済み - 2008
    イベント4th International Conference on Nanomaterials by Severe Plastic Deformation - Goslar, ドイツ
    継続期間: 8月 18 20088月 22 2008

    出版物シリーズ

    名前Materials Science Forum
    584-586 PART 2
    ISSN(印刷版)0255-5476
    ISSN(電子版)1662-9752

    その他

    その他4th International Conference on Nanomaterials by Severe Plastic Deformation
    国/地域ドイツ
    CityGoslar
    Period8/18/088/22/08

    !!!All Science Journal Classification (ASJC) codes

    • 材料科学(全般)
    • 凝縮系物理学
    • 材料力学
    • 機械工学

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