Control of optical and electrical properties of ZnO nanocrystals by nanosecond-laser annealing

T. Shimogaki, T. Ofuji, N. Tetsuyama, H. Kawahara, M. Higashihata, Hiroshi Ikenoue, Daisuke Nakamura, T. Okada

研究成果: 書籍/レポート タイプへの寄稿会議への寄与

1 被引用数 (Scopus)

抄録

Effects of laser annealing on electrical and optical properties of Zinc oxide (ZnO) nanocrystals, which are expected as building blocks for optoelectronic devices, have been investigated in this study. In the case of fabricating p-n junction in single one-dimensional ZnO nanocrystal, phosphorus-ions implanted p-type ZnO nanocrystals were recrystallized and recovered in the optical properties by nanosecond-laser annealing using a KrF excimer laser. Antimony-doped p-type ZnO nanocrystals were synthesized by irradiating laminated structure which antimony thin film were deposited on ZnO nanocrystals with the laser beam. Additionally, it is possible to control the growth rate of ZnO nanowires by using laser annealing. Irradiating with pulsed laser a part of ZnO buffer layer deposited on the a-cut sapphire substrate, then ZnO nanowires were grown on the ZnO buffer layer by the nanoparticle assisted pulsed laser deposition method. As a result, the clear boundary of the laser annealed and non-laser annealed area was appeared. It was observed that ZnO nanowires were grown densely at non-laser annealed area, on the other hand, sparse ones were grown at the laser-annealed region. In this report, the possibility of laser annealing techniques to establish the stable and reliable fabrication process of ZnO nanowires-based LD and LED are discussed on the basis of experimental results.

本文言語英語
ホスト出版物のタイトルOxide-Based Materials and Devices V
出版社SPIE
ISBN(印刷版)9780819499004
DOI
出版ステータス出版済み - 1月 1 2014
イベント5th Annual Oxide Based Materials and Devices Conference - San Francisco, CA, 米国
継続期間: 2月 2 20142月 5 2014

出版物シリーズ

名前Proceedings of SPIE - The International Society for Optical Engineering
8987
ISSN(印刷版)0277-786X
ISSN(電子版)1996-756X

その他

その他5th Annual Oxide Based Materials and Devices Conference
国/地域米国
CitySan Francisco, CA
Period2/2/142/5/14

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • コンピュータ サイエンスの応用
  • 応用数学
  • 電子工学および電気工学

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