Control of Si solid-phase nucleation by surface steps for high performance thin film transistors

Tanemasa Asano, Kenji Makihira

研究成果: Contribution to conferencePaper

2 引用 (Scopus)

抜粋

Solid-phase nucleation process of amorphous Si(a-Si) at steps formed at SiO2 substrate surface has been investigated. Steps were formed by either isotropic or anisotropic wet chemical etching and a-Si films were deposited by vacuum evaporation. It has been found that nucleation sites can be controlled by changing the step shape and a-Si thickness. Grain growth up to about 3μm from the step edge has been observed, n-channel MOSFET's which had steps at the source/drain edge were fabricated. They showed effective electron mobility of about 200 cm2/V.s, which is approximately one order higher than that obtained from MOSFET's fabricated in Si films formed by the conventional solid phase crystallization.

元の言語英語
ページ29-31
ページ数3
DOI
出版物ステータス出版済み - 1992
外部発表Yes
イベントExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn
継続期間: 8 26 19928 28 1992

その他

その他Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
Tsukuba, Jpn
期間8/26/928/28/92

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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  • これを引用

    Asano, T., & Makihira, K. (1992). Control of Si solid-phase nucleation by surface steps for high performance thin film transistors. 29-31. 論文発表場所 Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92, Tsukuba, Jpn, . https://doi.org/10.7567/ssdm.1992.a-2-1