Solid-phase nucleation process of amorphous Si(a-Si) at steps formed at SiO2 substrate surface has been investigated. Steps were formed by either isotropic or anisotropic wet chemical etching and a-Si films were deposited by vacuum evaporation. It has been found that nucleation sites can be controlled by changing the step shape and a-Si thickness. Grain growth up to about 3μm from the step edge has been observed, n-channel MOSFET's which had steps at the source/drain edge were fabricated. They showed effective electron mobility of about 200 cm2/V.s, which is approximately one order higher than that obtained from MOSFET's fabricated in Si films formed by the conventional solid phase crystallization.
|出版物ステータス||出版済み - 1992|
|イベント||Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn|
継続期間: 8 26 1992 → 8 28 1992
|その他||Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92|
|期間||8/26/92 → 8/28/92|
All Science Journal Classification (ASJC) codes