We controlled the orientation of a 2, 2′ -bithiophene-9,9- dioctylfluorene (F8T2) copolymer spin-coated film on a polycarbonate substrate using a laser-annealing technique and demonstrated an enhancement of the field-effect transistor characteristics. We used a semiconductor laser, having a lasing wavelength of λ=405 nm, with a small spot size of 400 nm. Using polarizing optical microscopy and x-ray diffraction analysis, we confirmed enhancement of the orientation of the molecular chains of F8T2, along the laser scanning direction. Following laser annealing, the field-effect hole mobility resulted in a value of μ=1.6× 10-3 cm2 /V s, which is about three times higher than that of the unannealed sample.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)