Controlled generation of atomic vacancies in chemical vapor deposited graphene by microwave oxygen plasma

R. Rozada, P. Solís-Fernández, J. I. Paredes, A. Martínez-Alonso, H. Ago, J. M.D. Tascón

研究成果: Contribution to journalLetter査読

23 被引用数 (Scopus)

抄録

The introduction of atomic-scale defects in a controllable manner and the understanding of their effect on the characteristics of graphene are essential to develop many applications based on this two-dimensional material. Here, we investigate the use of microwaveinduced oxygen plasma towards the generation of small-sized atomic vacancies (holes) in graphene grown by chemical vapor deposition. Scanning tunneling microscopy revealed that tunable vacancy densities in the 103-105 μm-2 range could be attained with proper plasma parameters. Transport measurements and Raman spectroscopy revealed p-type doping and a decrease in charge carrier mobility for the vacancy-decorated samples. This plasma-modified graphene could find use in, e.g., gas or liquid separation, or molecular sensing.

本文言語英語
ページ(範囲)664-669
ページ数6
ジャーナルCarbon
79
1
DOI
出版ステータス出版済み - 2014

All Science Journal Classification (ASJC) codes

  • 化学 (全般)
  • 材料科学(全般)

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