Controlled Growth of Heterostructured Ga/GaAs Nanowires with Sharp Schottky Barrier

Zhou Wang, Ying Wang, Xinyuan Zhou, Zaixing Yang, Yanxue Yin, Jie Zhang, Ning Han, Johnny C. Ho, Yunfa Chen

研究成果: Contribution to journalArticle査読

3 被引用数 (Scopus)

抄録

Because of the inevitable Fermi level pinning on surface/interface states of nanowires, achieving high-performance nanowire devices with controllable nanoscale contacts is always challenging but important. Herein, single-crystalline heterostructured Ga/GaAs nanowires with sharp hetero-Schottky interfaces have been successfully synthesized on amorphous substrates by utilizing Au nanoparticles as catalytic seeds via chemical vapor deposition. These nanowires are found to grow with the hemispherical Au7Ga2 catalytic tips following the vapor-liquid-solid mechanism. During the growth, simply by manipulating the source and growth temperatures, the Ga precipitation rate from Au-Ga alloy tips as well as the reaction rate of Ga precipitates with As can be reliably controlled in order to tailor the length (0-170 nm) of Ga nanowire segments obtained in the heterostructure. When configured into field-effect transistors, these Ga/GaAs NWs exhibit the p-type conductivity with a sharp hetero-Schottky barrier of ∼1.0 eV at the atomically connected Ga segment/GaAs NW body interface, in which this barrier height is close to the theoretical difference between the GaAs Fermi level (5.1-5.3 eV) and the Ga work function (∼4.3 eV), suggesting the effective formation of nanoscale contact by minimizing the Fermi level pinning, being advantageous for advanced nanoelectronics.

本文言語英語
ページ(範囲)4438-4444
ページ数7
ジャーナルCrystal Growth and Design
18
8
DOI
出版ステータス出版済み - 8 1 2018
外部発表はい

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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