Controlled Growth of Large-Area Uniform Multilayer Hexagonal Boron Nitride as an Effective 2D Substrate

Yuki Uchida, Sho Nakandakari, Kenji Kawahara, Shigeto Yamasaki, Masatoshi Mitsuhara, Hiroki Ago

研究成果: ジャーナルへの寄稿記事

9 引用 (Scopus)

抄録

Multilayer hexagonal boron nitride (h-BN) is an ideal insulator for two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides, because h-BN screens out influences from surroundings, allowing one to observe intrinsic physical properties of the 2D materials. However, the synthesis of large and uniform multilayer h-BN is still very challenging because it is difficult to control the segregation process of B and N atoms from metal catalysts during chemical vapor deposition (CVD) growth. Here, we demonstrate CVD growth of multilayer h-BN with high uniformity by using the Ni-Fe alloy film and borazine (B 3 H 6 N 3 ) as catalyst and precursor, respectively. Combining Ni and Fe metals tunes the solubilities of B and N atoms and, at the same time, allows one to engineer the metal crystallinity, which stimulates the uniform segregation of multilayer h-BN. Furthermore, we demonstrate that triangular WS 2 grains grown on the h-BN show photoluminescence stronger than that grown on a bare SiO 2 substrate. The PL line width of WS 2 /h-BN (the minimum and mean widths are 24 and 43 meV, respectively) is much narrower than those of WS 2 /SiO 2 (44 and 67 meV), indicating the effectiveness of our CVD-grown multilayer h-BN as an insulating layer. Large-area, multilayer h-BN realized in this work will provide an excellent platform for developing practical applications of 2D materials.

元の言語英語
ページ(範囲)6236-6244
ページ数9
ジャーナルACS Nano
12
発行部数6
DOI
出版物ステータス出版済み - 6 26 2018

Fingerprint

Boron nitride
boron nitrides
Multilayers
Substrates
Chemical vapor deposition
Metals
vapor deposition
metals
boron nitride
catalysts
Atoms
Catalysts
Graphite
Linewidth
Graphene
engineers
Transition metals
atoms
crystallinity
Photoluminescence

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

これを引用

Controlled Growth of Large-Area Uniform Multilayer Hexagonal Boron Nitride as an Effective 2D Substrate. / Uchida, Yuki; Nakandakari, Sho; Kawahara, Kenji; Yamasaki, Shigeto; Mitsuhara, Masatoshi; Ago, Hiroki.

:: ACS Nano, 巻 12, 番号 6, 26.06.2018, p. 6236-6244.

研究成果: ジャーナルへの寄稿記事

@article{a6aabff6c17f48809e702779453c7cf9,
title = "Controlled Growth of Large-Area Uniform Multilayer Hexagonal Boron Nitride as an Effective 2D Substrate",
abstract = "Multilayer hexagonal boron nitride (h-BN) is an ideal insulator for two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides, because h-BN screens out influences from surroundings, allowing one to observe intrinsic physical properties of the 2D materials. However, the synthesis of large and uniform multilayer h-BN is still very challenging because it is difficult to control the segregation process of B and N atoms from metal catalysts during chemical vapor deposition (CVD) growth. Here, we demonstrate CVD growth of multilayer h-BN with high uniformity by using the Ni-Fe alloy film and borazine (B 3 H 6 N 3 ) as catalyst and precursor, respectively. Combining Ni and Fe metals tunes the solubilities of B and N atoms and, at the same time, allows one to engineer the metal crystallinity, which stimulates the uniform segregation of multilayer h-BN. Furthermore, we demonstrate that triangular WS 2 grains grown on the h-BN show photoluminescence stronger than that grown on a bare SiO 2 substrate. The PL line width of WS 2 /h-BN (the minimum and mean widths are 24 and 43 meV, respectively) is much narrower than those of WS 2 /SiO 2 (44 and 67 meV), indicating the effectiveness of our CVD-grown multilayer h-BN as an insulating layer. Large-area, multilayer h-BN realized in this work will provide an excellent platform for developing practical applications of 2D materials.",
author = "Yuki Uchida and Sho Nakandakari and Kenji Kawahara and Shigeto Yamasaki and Masatoshi Mitsuhara and Hiroki Ago",
year = "2018",
month = "6",
day = "26",
doi = "10.1021/acsnano.8b03055",
language = "English",
volume = "12",
pages = "6236--6244",
journal = "ACS Nano",
issn = "1936-0851",
publisher = "American Chemical Society",
number = "6",

}

TY - JOUR

T1 - Controlled Growth of Large-Area Uniform Multilayer Hexagonal Boron Nitride as an Effective 2D Substrate

AU - Uchida, Yuki

AU - Nakandakari, Sho

AU - Kawahara, Kenji

AU - Yamasaki, Shigeto

AU - Mitsuhara, Masatoshi

AU - Ago, Hiroki

PY - 2018/6/26

Y1 - 2018/6/26

N2 - Multilayer hexagonal boron nitride (h-BN) is an ideal insulator for two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides, because h-BN screens out influences from surroundings, allowing one to observe intrinsic physical properties of the 2D materials. However, the synthesis of large and uniform multilayer h-BN is still very challenging because it is difficult to control the segregation process of B and N atoms from metal catalysts during chemical vapor deposition (CVD) growth. Here, we demonstrate CVD growth of multilayer h-BN with high uniformity by using the Ni-Fe alloy film and borazine (B 3 H 6 N 3 ) as catalyst and precursor, respectively. Combining Ni and Fe metals tunes the solubilities of B and N atoms and, at the same time, allows one to engineer the metal crystallinity, which stimulates the uniform segregation of multilayer h-BN. Furthermore, we demonstrate that triangular WS 2 grains grown on the h-BN show photoluminescence stronger than that grown on a bare SiO 2 substrate. The PL line width of WS 2 /h-BN (the minimum and mean widths are 24 and 43 meV, respectively) is much narrower than those of WS 2 /SiO 2 (44 and 67 meV), indicating the effectiveness of our CVD-grown multilayer h-BN as an insulating layer. Large-area, multilayer h-BN realized in this work will provide an excellent platform for developing practical applications of 2D materials.

AB - Multilayer hexagonal boron nitride (h-BN) is an ideal insulator for two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides, because h-BN screens out influences from surroundings, allowing one to observe intrinsic physical properties of the 2D materials. However, the synthesis of large and uniform multilayer h-BN is still very challenging because it is difficult to control the segregation process of B and N atoms from metal catalysts during chemical vapor deposition (CVD) growth. Here, we demonstrate CVD growth of multilayer h-BN with high uniformity by using the Ni-Fe alloy film and borazine (B 3 H 6 N 3 ) as catalyst and precursor, respectively. Combining Ni and Fe metals tunes the solubilities of B and N atoms and, at the same time, allows one to engineer the metal crystallinity, which stimulates the uniform segregation of multilayer h-BN. Furthermore, we demonstrate that triangular WS 2 grains grown on the h-BN show photoluminescence stronger than that grown on a bare SiO 2 substrate. The PL line width of WS 2 /h-BN (the minimum and mean widths are 24 and 43 meV, respectively) is much narrower than those of WS 2 /SiO 2 (44 and 67 meV), indicating the effectiveness of our CVD-grown multilayer h-BN as an insulating layer. Large-area, multilayer h-BN realized in this work will provide an excellent platform for developing practical applications of 2D materials.

UR - http://www.scopus.com/inward/record.url?scp=85048092329&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85048092329&partnerID=8YFLogxK

U2 - 10.1021/acsnano.8b03055

DO - 10.1021/acsnano.8b03055

M3 - Article

VL - 12

SP - 6236

EP - 6244

JO - ACS Nano

JF - ACS Nano

SN - 1936-0851

IS - 6

ER -