Controlling Bi-Provoked Nanostructure Formation in GaAs/GaAsBi Core-Shell Nanowires

Teruyoshi Matsuda, Kyohei Takada, Kohsuke Yano, Rikuo Tsutsumi, Kohei Yoshikawa, Satoshi Shimomura, Yumiko Shimizu, Kazuki Nagashima, Takeshi Yanagida, Fumitaro Ishikawa

研究成果: ジャーナルへの寄稿記事

抄録

We control the formation of Bi-induced nanostructures on the growth of GaAs/GaAsBi core-shell nanowires (NWs). Bi serves as not only a constituent but also a surfactant and nanowire growth catalyst. Thus, we paved a way to achieve unexplored III-V nanostructures employing the characteristic supersaturation of catalyst droplets, structural modifications induced by strain, and incorporation into the host GaAs matrix correlated with crystalline defects and orientations. When Ga is deficient during growth, Bi accumulates on the vertex of core GaAs NWs and serves as a nanowire growth catalyst for the branched structures to azimuthal <112>. We find a strong correlation between Bi accumulation and stacking faults. Furthermore, Bi is preferentially incorporated on the GaAs (112)B surface, leading to spatially selective Bi incorporation into a confined area that has a Bi concentration of over 7%. The obtained GaAs/GaAsBi/GaAs heterostructure with an interface defined by the crystalline twin defects in a zinc-blende structure can be potentially applied to a quantum confined structure. Our finding provides a rational design concept for the creation of GaAsBi based nanostructures and the control of Bi incorporation beyond the fundamental limit.

元の言語英語
ページ(範囲)8510-8518
ページ数9
ジャーナルNano Letters
19
発行部数12
DOI
出版物ステータス出版済み - 12 11 2019

Fingerprint

Nanowires
Nanostructures
nanowires
catalysts
Catalysts
Crystalline materials
Defects
Supersaturation
defects
Stacking faults
supersaturation
crystal defects
Crystal orientation
Heterojunctions
apexes
Surface active agents
Zinc
zinc
surfactants
Surface-Active Agents

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

これを引用

Matsuda, T., Takada, K., Yano, K., Tsutsumi, R., Yoshikawa, K., Shimomura, S., ... Ishikawa, F. (2019). Controlling Bi-Provoked Nanostructure Formation in GaAs/GaAsBi Core-Shell Nanowires. Nano Letters, 19(12), 8510-8518. https://doi.org/10.1021/acs.nanolett.9b02932

Controlling Bi-Provoked Nanostructure Formation in GaAs/GaAsBi Core-Shell Nanowires. / Matsuda, Teruyoshi; Takada, Kyohei; Yano, Kohsuke; Tsutsumi, Rikuo; Yoshikawa, Kohei; Shimomura, Satoshi; Shimizu, Yumiko; Nagashima, Kazuki; Yanagida, Takeshi; Ishikawa, Fumitaro.

:: Nano Letters, 巻 19, 番号 12, 11.12.2019, p. 8510-8518.

研究成果: ジャーナルへの寄稿記事

Matsuda, T, Takada, K, Yano, K, Tsutsumi, R, Yoshikawa, K, Shimomura, S, Shimizu, Y, Nagashima, K, Yanagida, T & Ishikawa, F 2019, 'Controlling Bi-Provoked Nanostructure Formation in GaAs/GaAsBi Core-Shell Nanowires', Nano Letters, 巻. 19, 番号 12, pp. 8510-8518. https://doi.org/10.1021/acs.nanolett.9b02932
Matsuda T, Takada K, Yano K, Tsutsumi R, Yoshikawa K, Shimomura S その他. Controlling Bi-Provoked Nanostructure Formation in GaAs/GaAsBi Core-Shell Nanowires. Nano Letters. 2019 12 11;19(12):8510-8518. https://doi.org/10.1021/acs.nanolett.9b02932
Matsuda, Teruyoshi ; Takada, Kyohei ; Yano, Kohsuke ; Tsutsumi, Rikuo ; Yoshikawa, Kohei ; Shimomura, Satoshi ; Shimizu, Yumiko ; Nagashima, Kazuki ; Yanagida, Takeshi ; Ishikawa, Fumitaro. / Controlling Bi-Provoked Nanostructure Formation in GaAs/GaAsBi Core-Shell Nanowires. :: Nano Letters. 2019 ; 巻 19, 番号 12. pp. 8510-8518.
@article{8f860166f22d421b968311203770303d,
title = "Controlling Bi-Provoked Nanostructure Formation in GaAs/GaAsBi Core-Shell Nanowires",
abstract = "We control the formation of Bi-induced nanostructures on the growth of GaAs/GaAsBi core-shell nanowires (NWs). Bi serves as not only a constituent but also a surfactant and nanowire growth catalyst. Thus, we paved a way to achieve unexplored III-V nanostructures employing the characteristic supersaturation of catalyst droplets, structural modifications induced by strain, and incorporation into the host GaAs matrix correlated with crystalline defects and orientations. When Ga is deficient during growth, Bi accumulates on the vertex of core GaAs NWs and serves as a nanowire growth catalyst for the branched structures to azimuthal <112>. We find a strong correlation between Bi accumulation and stacking faults. Furthermore, Bi is preferentially incorporated on the GaAs (112)B surface, leading to spatially selective Bi incorporation into a confined area that has a Bi concentration of over 7{\%}. The obtained GaAs/GaAsBi/GaAs heterostructure with an interface defined by the crystalline twin defects in a zinc-blende structure can be potentially applied to a quantum confined structure. Our finding provides a rational design concept for the creation of GaAsBi based nanostructures and the control of Bi incorporation beyond the fundamental limit.",
author = "Teruyoshi Matsuda and Kyohei Takada and Kohsuke Yano and Rikuo Tsutsumi and Kohei Yoshikawa and Satoshi Shimomura and Yumiko Shimizu and Kazuki Nagashima and Takeshi Yanagida and Fumitaro Ishikawa",
year = "2019",
month = "12",
day = "11",
doi = "10.1021/acs.nanolett.9b02932",
language = "English",
volume = "19",
pages = "8510--8518",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "12",

}

TY - JOUR

T1 - Controlling Bi-Provoked Nanostructure Formation in GaAs/GaAsBi Core-Shell Nanowires

AU - Matsuda, Teruyoshi

AU - Takada, Kyohei

AU - Yano, Kohsuke

AU - Tsutsumi, Rikuo

AU - Yoshikawa, Kohei

AU - Shimomura, Satoshi

AU - Shimizu, Yumiko

AU - Nagashima, Kazuki

AU - Yanagida, Takeshi

AU - Ishikawa, Fumitaro

PY - 2019/12/11

Y1 - 2019/12/11

N2 - We control the formation of Bi-induced nanostructures on the growth of GaAs/GaAsBi core-shell nanowires (NWs). Bi serves as not only a constituent but also a surfactant and nanowire growth catalyst. Thus, we paved a way to achieve unexplored III-V nanostructures employing the characteristic supersaturation of catalyst droplets, structural modifications induced by strain, and incorporation into the host GaAs matrix correlated with crystalline defects and orientations. When Ga is deficient during growth, Bi accumulates on the vertex of core GaAs NWs and serves as a nanowire growth catalyst for the branched structures to azimuthal <112>. We find a strong correlation between Bi accumulation and stacking faults. Furthermore, Bi is preferentially incorporated on the GaAs (112)B surface, leading to spatially selective Bi incorporation into a confined area that has a Bi concentration of over 7%. The obtained GaAs/GaAsBi/GaAs heterostructure with an interface defined by the crystalline twin defects in a zinc-blende structure can be potentially applied to a quantum confined structure. Our finding provides a rational design concept for the creation of GaAsBi based nanostructures and the control of Bi incorporation beyond the fundamental limit.

AB - We control the formation of Bi-induced nanostructures on the growth of GaAs/GaAsBi core-shell nanowires (NWs). Bi serves as not only a constituent but also a surfactant and nanowire growth catalyst. Thus, we paved a way to achieve unexplored III-V nanostructures employing the characteristic supersaturation of catalyst droplets, structural modifications induced by strain, and incorporation into the host GaAs matrix correlated with crystalline defects and orientations. When Ga is deficient during growth, Bi accumulates on the vertex of core GaAs NWs and serves as a nanowire growth catalyst for the branched structures to azimuthal <112>. We find a strong correlation between Bi accumulation and stacking faults. Furthermore, Bi is preferentially incorporated on the GaAs (112)B surface, leading to spatially selective Bi incorporation into a confined area that has a Bi concentration of over 7%. The obtained GaAs/GaAsBi/GaAs heterostructure with an interface defined by the crystalline twin defects in a zinc-blende structure can be potentially applied to a quantum confined structure. Our finding provides a rational design concept for the creation of GaAsBi based nanostructures and the control of Bi incorporation beyond the fundamental limit.

UR - http://www.scopus.com/inward/record.url?scp=85073618923&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85073618923&partnerID=8YFLogxK

U2 - 10.1021/acs.nanolett.9b02932

DO - 10.1021/acs.nanolett.9b02932

M3 - Article

AN - SCOPUS:85073618923

VL - 19

SP - 8510

EP - 8518

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 12

ER -