抄録
Discussed are the experimental and numerical studies on nucleation and erasing of sub-μm2 domains in spin valve strips, which are essential operations in a high density magnetic random access memory (MRAM) and important for design consideration of a device structure. The device fabricated based on these studies is also described.
本文言語 | 英語 |
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ページ(範囲) | HA-01 |
ジャーナル | Digests of the Intermag Conference |
出版ステータス | 出版済み - 12月 1 1999 |
イベント | Proceedings of the 1999 IEEE International Magnetics Conference 'Digest of Intermag 99' - Kyongju, South Korea 継続期間: 5月 18 1999 → 5月 21 1999 |
!!!All Science Journal Classification (ASJC) codes
- 電子工学および電気工学