Controlling of sub-μm2 domain in spin valve strip with conductor current

K. Matsuyama; H. Hosokawa; Y. Nozaki

Controlling of sub-μm² domain in spin valve strip with conductor current

K. Matsuyama, H. Hosokawa, Y. Nozaki

電子デバイス工学

研究成果: Contribution to journal › Conference article › 査読

抄録

Discussed are the experimental and numerical studies on nucleation and erasing of sub-μm² domains in spin valve strips, which are essential operations in a high density magnetic random access memory (MRAM) and important for design consideration of a device structure. The device fabricated based on these studies is also described.

本文言語	英語
ページ（範囲）	HA-01
ジャーナル	Digests of the Intermag Conference
出版ステータス	出版済み - 12 1 1999
イベント	Proceedings of the 1999 IEEE International Magnetics Conference 'Digest of Intermag 99' - Kyongju, South Korea 継続期間: 5 18 1999 → 5 21 1999

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

他のファイルとリンク

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引用スタイル

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title = "Controlling of sub-μm2 domain in spin valve strip with conductor current",

abstract = "Discussed are the experimental and numerical studies on nucleation and erasing of sub-μm2 domains in spin valve strips, which are essential operations in a high density magnetic random access memory (MRAM) and important for design consideration of a device structure. The device fabricated based on these studies is also described.",

author = "K. Matsuyama and H. Hosokawa and Y. Nozaki",

year = "1999",

month = dec,

day = "1",

language = "English",

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journal = "Digests of the Intermag Conference",

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note = "Proceedings of the 1999 IEEE International Magnetics Conference 'Digest of Intermag 99' ; Conference date: 18-05-1999 Through 21-05-1999",

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TY - JOUR

T1 - Controlling of sub-μm2 domain in spin valve strip with conductor current

AU - Matsuyama, K.

AU - Hosokawa, H.

AU - Nozaki, Y.

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Y1 - 1999/12/1

N2 - Discussed are the experimental and numerical studies on nucleation and erasing of sub-μm2 domains in spin valve strips, which are essential operations in a high density magnetic random access memory (MRAM) and important for design consideration of a device structure. The device fabricated based on these studies is also described.

AB - Discussed are the experimental and numerical studies on nucleation and erasing of sub-μm2 domains in spin valve strips, which are essential operations in a high density magnetic random access memory (MRAM) and important for design consideration of a device structure. The device fabricated based on these studies is also described.

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M3 - Conference article

AN - SCOPUS:0033300980

SP - HA-01

JO - Digests of the Intermag Conference

JF - Digests of the Intermag Conference

SN - 0074-6843

T2 - Proceedings of the 1999 IEEE International Magnetics Conference 'Digest of Intermag 99'

Y2 - 18 May 1999 through 21 May 1999

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