Controlling of sub-μm2 domains in spin valve strips with conductor current

K. Matsuyama, H. Hosokawa, Y. Nozaki

研究成果: Contribution to journalArticle査読

1 被引用数 (Scopus)

抄録

Nucleation and erasing of sub-μm2 domains in spin valve strips have been performed with current pulses applied through conductors. A spin valve material of NiFe/Co/Cu/Co was deposited by magnetron sputtering and patterned into sense lines of 40 parallel strips with 0.4 μm width and 2 μm pitch. Selective domain nucleation under parallel conductors with l μm width and 2.6 μm pitch has been confirmed by the current induced MR change. Pulses with opposite polarity performed erasing of nucleated domains. Reproducible MR change with a variation of ±10 % relative to the mid value was realized in 104 operations of the domain nucleation process.

本文言語英語
ページ(範囲)2826-2828
ページ数3
ジャーナルIEEE Transactions on Magnetics
35
5 PART 1
DOI
出版ステータス出版済み - 12 1 1999

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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