Controlling the nucleation site and crystal orientation during eximer-laser annealing processes in thin amorphous Si films on glass: A molecular-dynamics study

T. Motooka, Shinji Munetoh, R. Kishikawa, T. Mitani, T. Ogata

研究成果: 著書/レポートタイプへの貢献会議での発言

抄録

We propose a new technique to control the nucleation site and crystal orientation for obtaining large poly-Si grains with the (001) surface during eximer-laser annealing processes of amorphous Si films on glass based on molecular dynamics (MD) simulations. Preferential nucleation sites of supercooled melted Si can be controlled at the top parts of nano-scale reverse-pyramidal pits on glass by setting a proper temperature-gradient in the vertical direction of the glass substrate. MD simulations indicate that the nano-structured glass surface must be modified as a chemically inactive wall to melted Si, otherwise a large interfacial energy between Si and SiO2 prevents nucleation at the pyramidal interface where the Si(111) surface is generated. It is also found that {111} stacking faults are sometimes formed. We suggest that this {111} stacking fault formation can be avoided by utilizing low-temperature solid-phase-epitaxial growth of Si where crystallization tends to proceed along the amorphous/crystal Si(001) interface.

元の言語英語
ホスト出版物のタイトルECS Transactions - 2007 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs.TFT
ページ191-196
ページ数6
エディション1
DOI
出版物ステータス出版済み - 12 1 2007
イベント2007 International Conference on SemiconductorTechnology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT - Barga, イタリア
継続期間: 7 29 20078 3 2007

出版物シリーズ

名前ECS Transactions
番号1
8
ISSN(印刷物)1938-5862
ISSN(電子版)1938-6737

その他

その他2007 International Conference on SemiconductorTechnology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT
イタリア
Barga
期間7/29/078/3/07

Fingerprint

Crystal orientation
Molecular dynamics
Nucleation
Annealing
Glass
Lasers
Stacking faults
Computer simulation
Epitaxial growth
Interfacial energy
Polysilicon
Thermal gradients
Crystallization
Crystals
Substrates
Temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)

これを引用

Motooka, T., Munetoh, S., Kishikawa, R., Mitani, T., & Ogata, T. (2007). Controlling the nucleation site and crystal orientation during eximer-laser annealing processes in thin amorphous Si films on glass: A molecular-dynamics study. : ECS Transactions - 2007 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs.TFT (1 版, pp. 191-196). (ECS Transactions; 巻数 8, 番号 1). https://doi.org/10.1149/1.2767307

Controlling the nucleation site and crystal orientation during eximer-laser annealing processes in thin amorphous Si films on glass : A molecular-dynamics study. / Motooka, T.; Munetoh, Shinji; Kishikawa, R.; Mitani, T.; Ogata, T.

ECS Transactions - 2007 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs.TFT. 1. 編 2007. p. 191-196 (ECS Transactions; 巻 8, 番号 1).

研究成果: 著書/レポートタイプへの貢献会議での発言

Motooka, T, Munetoh, S, Kishikawa, R, Mitani, T & Ogata, T 2007, Controlling the nucleation site and crystal orientation during eximer-laser annealing processes in thin amorphous Si films on glass: A molecular-dynamics study. : ECS Transactions - 2007 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs.TFT. 1 Edn, ECS Transactions, 番号 1, 巻. 8, pp. 191-196, 2007 International Conference on SemiconductorTechnology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT, Barga, イタリア, 7/29/07. https://doi.org/10.1149/1.2767307
Motooka T, Munetoh S, Kishikawa R, Mitani T, Ogata T. Controlling the nucleation site and crystal orientation during eximer-laser annealing processes in thin amorphous Si films on glass: A molecular-dynamics study. : ECS Transactions - 2007 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs.TFT. 1 版 2007. p. 191-196. (ECS Transactions; 1). https://doi.org/10.1149/1.2767307
Motooka, T. ; Munetoh, Shinji ; Kishikawa, R. ; Mitani, T. ; Ogata, T. / Controlling the nucleation site and crystal orientation during eximer-laser annealing processes in thin amorphous Si films on glass : A molecular-dynamics study. ECS Transactions - 2007 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs.TFT. 1. 版 2007. pp. 191-196 (ECS Transactions; 1).
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