Cooling rate dependent high substitutional Sn concentration (>10%) in GeSn crystals on insulator by pulsed laser-annealing

K. Moto, R. Matsumura, T. Sadoh, H. Ikenoue, M. Miyao

研究成果: 書籍/レポート タイプへの寄稿会議への寄与

抄録

Crystallization of Ge1-xSnx (0.1≤x≤0.2) on quartz substrate by pulsed laser annealing was investigated. Substitutional Sn concentration increase with decreasing pulse number. As a result, GeSn crystals with very high substitutional Sn concentration (∼12%) has been realized for the sample (initial Sn concentration: 15%) with a single shot. These results were attributed to the nonthermal equilibrium growth with higher cooling rate by decreasing pulse number. This technique is expected for application to highspeed thin-film-transistors and high-efficiency optical devices.

本文言語英語
ホスト出版物のタイトルThin Film Transistors 13, TFT 13
編集者Y. Kuo
出版社Electrochemical Society Inc.
ページ109-113
ページ数5
10
ISBN(電子版)9781607687276, 9781607687672, 9781607687689, 9781607687696, 9781607687702, 9781607687719, 9781607687726, 9781607687733, 9781607687740, 9781607687757, 9781607687771, 9781607687788, 9781607687795, 9781607687801, 9781607687818, 9781607687825, 9781607687832, 9781607687849, 9781607687856, 9781607687863, 9781607687887, 9781607687894, 9781607687900, 9781607687917, 9781607687924, 9781607687931, 9781607687948, 9781607687955, 9781607687962, 9781607687979, 9781607687986, 9781607687993, 9781607688006, 9781607688013, 9781607688020, 9781607688037
DOI
出版ステータス出版済み - 2016
イベントSymposium on Thin Film Transistors 13, TFT 2016 - PRiME 2016/230th ECS Meeting - Honolulu, 米国
継続期間: 10月 2 201610月 7 2016

出版物シリーズ

名前ECS Transactions
番号10
75
ISSN(印刷版)1938-6737
ISSN(電子版)1938-5862

その他

その他Symposium on Thin Film Transistors 13, TFT 2016 - PRiME 2016/230th ECS Meeting
国/地域米国
CityHonolulu
Period10/2/1610/7/16

!!!All Science Journal Classification (ASJC) codes

  • 工学(全般)

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