Correlation between ferromagnetism and dopant 3 d metal-oxygen hybridized state lying at the bottom of conduction band in ZnO-based diluted magnetic semiconductor system

Takuto Tsukahara, Satoshi An, Sho Otsuru, Yasuhisa Tezuka, Shunsuke Nozawa, Junichi Adachi, Kenta Akashi, Yuji Inagaki, Tatsuya Kawae, Hirofumi Ishii, Yen Fa Liao, Tetsuya Kida, Satoshi Suehiro, Masashi Nantoh, Koji Ishibashi, Yoichi Ishiwata

研究成果: ジャーナルへの寄稿学術誌査読

抄録

We systematically investigate the unoccupied electronic states, crystal structure, and magnetism of V- and Mn-doped ZnO nanocrystals (NCs). Post-annealing treatment at 300 °C converts diamagnetic V 5 + into magnetic high-spin V 3 + ions, which leads to room-temperature ferromagnetism for the V-doped NCs. In contrast, ferromagnetism does not occur for the Mn-doped NCs. Oxygen 1 s x-ray absorption spectroscopy reveals that the unoccupied metal-oxygen hybridized state lies near the bottom of the conduction band for the V-doped NCs but lies far above it for the Mn-doped NCs. Therefore, the ferromagnetism in a ZnO-based diluted magnetic semiconductor system can be understood within the framework of the n-type carrier-mediated ferromagnetism model.

本文言語英語
論文番号243904
ジャーナルJournal of Applied Physics
130
24
DOI
出版ステータス出版済み - 12月 28 2021

!!!All Science Journal Classification (ASJC) codes

  • 物理学および天文学(全般)

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