Correlation between intrinsic defects and electrical properties in the high-quality Cu2ZnSnS4 single crystal

Akira Nagaoka, Hideto Miyake, Tomoyasu Taniyama, Koichi Kakimoto, Kenji Yoshino

研究成果: Contribution to journalArticle査読

59 被引用数 (Scopus)

抄録

Temperature dependent Hall effect measurements from 20 to 300 K have been performed on the quaternary compounds Cu2ZnSnS4 (CZTS) single crystals. The conductivity mechanisms can be described by a two-path system using Mott variable range hopping and typical thermal activation conduction. The center level of the acceptor band is 132 meV above the valence band maximum and is of width 40 meV. A correlation between the activation energy and acceptor concentration in CZTS is observed.

本文言語英語
論文番号112107
ジャーナルApplied Physics Letters
103
11
DOI
出版ステータス出版済み - 9 9 2013

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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