Crystal growth of 50 cm square mono-like Si by directional solidification and its characterization

Y. Miyamura, H. Harada, K. Jiptner, J. Chen, R. R. Prakash, S. Nakano, B. Gao, K. Kakimoto, T. Sekiguchi

研究成果: ジャーナルへの寄稿記事

18 引用 (Scopus)

抜粋

Seed-assisted growth of mono crystalline-like Silicon (mono-like Si) ingots of 50 cm square has been performed. By controlling the shape of the liquid-solid interface, a mono-like crystal was grown from a small seed of 20 cm diameter. Several developments to reduce the carbon incorporation have been realized as can be seen from the shiny ingot surfaces. The dislocation density is reduced to the order of 104cm-2.

元の言語英語
ページ(範囲)133-136
ページ数4
ジャーナルJournal of Crystal Growth
401
DOI
出版物ステータス出版済み - 9 1 2014

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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    Miyamura, Y., Harada, H., Jiptner, K., Chen, J., Prakash, R. R., Nakano, S., Gao, B., Kakimoto, K., & Sekiguchi, T. (2014). Crystal growth of 50 cm square mono-like Si by directional solidification and its characterization. Journal of Crystal Growth, 401, 133-136. https://doi.org/10.1016/j.jcrysgro.2014.03.016