TY - JOUR
T1 - Crystal growth of high-purity multicrystalline silicon using a unidirectional solidification furnace for solar cells
AU - Gao, B.
AU - Chen, X. J.
AU - Nakano, S.
AU - Kakimoto, K.
PY - 2010/4/15
Y1 - 2010/4/15
N2 - An improved furnace was designed to reduce the carbon impurity of multicrystalline silicon at unidirectional solidification process. Global simulations of oxygen and carbon transport in the improved furnace showed that the carbon concentration in the crystal can be reduced to a negligible value in the order of 1014 atom/cm3; simultaneously, the oxygen concentration in the crystal can also be reduced by at least 30%. Therefore, the present design can markedly reduce the back transfer of CO from graphite components of the furnace.
AB - An improved furnace was designed to reduce the carbon impurity of multicrystalline silicon at unidirectional solidification process. Global simulations of oxygen and carbon transport in the improved furnace showed that the carbon concentration in the crystal can be reduced to a negligible value in the order of 1014 atom/cm3; simultaneously, the oxygen concentration in the crystal can also be reduced by at least 30%. Therefore, the present design can markedly reduce the back transfer of CO from graphite components of the furnace.
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U2 - 10.1016/j.jcrysgro.2010.01.034
DO - 10.1016/j.jcrysgro.2010.01.034
M3 - Article
AN - SCOPUS:77949912393
VL - 312
SP - 1572
EP - 1576
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 9
ER -