Crystal growth of high-purity multicrystalline silicon using a unidirectional solidification furnace for solar cells

B. Gao, X. J. Chen, S. Nakano, K. Kakimoto

研究成果: Contribution to journalArticle査読

74 被引用数 (Scopus)

抄録

An improved furnace was designed to reduce the carbon impurity of multicrystalline silicon at unidirectional solidification process. Global simulations of oxygen and carbon transport in the improved furnace showed that the carbon concentration in the crystal can be reduced to a negligible value in the order of 1014 atom/cm3; simultaneously, the oxygen concentration in the crystal can also be reduced by at least 30%. Therefore, the present design can markedly reduce the back transfer of CO from graphite components of the furnace.

本文言語英語
ページ(範囲)1572-1576
ページ数5
ジャーナルJournal of Crystal Growth
312
9
DOI
出版ステータス出版済み - 4 15 2010
外部発表はい

All Science Journal Classification (ASJC) codes

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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