Crystal growth of silicon thin films on glass by excimer laser annealing: A molecular-dynamics study

Shinji Munetoh, Takahide Kuranaga, Byoung Min Lee, Teruaki Motooka, Takahiko Endo, Terunori Warabisako

研究成果: ジャーナルへの寄稿記事

7 引用 (Scopus)

抄録

We have investigated crystallization processes during excimer laser annealing of silicon (Si) thin films on glass by molecular-dynamics simulations and laser power dependence of the polycrystalline Si grain size was discussed. The temperature range for the highest growth rate was found to be approximately 500 degrees higher than that for the highest nucleation rate. It was also found that a steady state temperature gradient was obtained in the direction of the surface normal during laser irradiation. These results suggest that nucleation occurs in the Si/glass interface region and then crystallization proceed toward the high temperature region during laser irradiation in the near-complete melting condition.

元の言語英語
ページ(範囲)4344-4346
ページ数3
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
45
発行部数5 B
DOI
出版物ステータス出版済み - 5 25 2006

Fingerprint

laser annealing
Excimer lasers
Laser beam effects
Crystal growth
excimer lasers
Molecular dynamics
crystal growth
Nucleation
Crystallization
Annealing
molecular dynamics
Glass
Thin films
Silicon
glass
silicon
thin films
Polysilicon
nucleation
Thermal gradients

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

これを引用

Crystal growth of silicon thin films on glass by excimer laser annealing : A molecular-dynamics study. / Munetoh, Shinji; Kuranaga, Takahide; Lee, Byoung Min; Motooka, Teruaki; Endo, Takahiko; Warabisako, Terunori.

:: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 巻 45, 番号 5 B, 25.05.2006, p. 4344-4346.

研究成果: ジャーナルへの寄稿記事

Munetoh, Shinji ; Kuranaga, Takahide ; Lee, Byoung Min ; Motooka, Teruaki ; Endo, Takahiko ; Warabisako, Terunori. / Crystal growth of silicon thin films on glass by excimer laser annealing : A molecular-dynamics study. :: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2006 ; 巻 45, 番号 5 B. pp. 4344-4346.
@article{0c266759ccdc481f876f4b6db908c3c8,
title = "Crystal growth of silicon thin films on glass by excimer laser annealing: A molecular-dynamics study",
abstract = "We have investigated crystallization processes during excimer laser annealing of silicon (Si) thin films on glass by molecular-dynamics simulations and laser power dependence of the polycrystalline Si grain size was discussed. The temperature range for the highest growth rate was found to be approximately 500 degrees higher than that for the highest nucleation rate. It was also found that a steady state temperature gradient was obtained in the direction of the surface normal during laser irradiation. These results suggest that nucleation occurs in the Si/glass interface region and then crystallization proceed toward the high temperature region during laser irradiation in the near-complete melting condition.",
author = "Shinji Munetoh and Takahide Kuranaga and Lee, {Byoung Min} and Teruaki Motooka and Takahiko Endo and Terunori Warabisako",
year = "2006",
month = "5",
day = "25",
doi = "10.1143/JJAP.45.4344",
language = "English",
volume = "45",
pages = "4344--4346",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Institute of Physics",
number = "5 B",

}

TY - JOUR

T1 - Crystal growth of silicon thin films on glass by excimer laser annealing

T2 - A molecular-dynamics study

AU - Munetoh, Shinji

AU - Kuranaga, Takahide

AU - Lee, Byoung Min

AU - Motooka, Teruaki

AU - Endo, Takahiko

AU - Warabisako, Terunori

PY - 2006/5/25

Y1 - 2006/5/25

N2 - We have investigated crystallization processes during excimer laser annealing of silicon (Si) thin films on glass by molecular-dynamics simulations and laser power dependence of the polycrystalline Si grain size was discussed. The temperature range for the highest growth rate was found to be approximately 500 degrees higher than that for the highest nucleation rate. It was also found that a steady state temperature gradient was obtained in the direction of the surface normal during laser irradiation. These results suggest that nucleation occurs in the Si/glass interface region and then crystallization proceed toward the high temperature region during laser irradiation in the near-complete melting condition.

AB - We have investigated crystallization processes during excimer laser annealing of silicon (Si) thin films on glass by molecular-dynamics simulations and laser power dependence of the polycrystalline Si grain size was discussed. The temperature range for the highest growth rate was found to be approximately 500 degrees higher than that for the highest nucleation rate. It was also found that a steady state temperature gradient was obtained in the direction of the surface normal during laser irradiation. These results suggest that nucleation occurs in the Si/glass interface region and then crystallization proceed toward the high temperature region during laser irradiation in the near-complete melting condition.

UR - http://www.scopus.com/inward/record.url?scp=33744487657&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33744487657&partnerID=8YFLogxK

U2 - 10.1143/JJAP.45.4344

DO - 10.1143/JJAP.45.4344

M3 - Article

AN - SCOPUS:33744487657

VL - 45

SP - 4344

EP - 4346

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 5 B

ER -