Crystal-plane dependence of critical concentration for nucleation on hydrothermal ZnO nanowires

Yong He, Takeshi Yanagida, Kazuki Nagashima, Fuwei Zhuge, Gang Meng, Bo Xu, Annop Klamchuen, Sakon Rahong, Masaki Kanai, Xiaomin Li, Masaru Suzuki, Shoichi Kai, Tomoji Kawai

研究成果: Contribution to journalArticle査読

51 被引用数 (Scopus)

抄録

Hydrothermal ZnO nanowires have shown great potential for various nanoscale device applications due to their fascinating properties and low-temperature processing. A preferential crystal growth of ZnO (0001) polar plane is essential and fundamental to realize the anisotropic nanowire growth. Here we demonstrate that a critical concentration for a nucleation strongly depends on a crystal plane, which plays an important role on an anisotropic growth of hydrothermal ZnO nanowires. We measure a growth rate of each crystal plane when varying a concentration of Zn ionic species by using a regular array structure. Selective anisotropic growth on (0001) plane emerges within a certain concentration range. Above the concentration range, a crystal growth on (101Ì..0) plane tends to simultaneously occur. This strong concentration dependence on the crystal plane is understood in terms of a critical concentration difference between (0001) plane and (101Ì..0) plane, which is related to the surface energy difference between the crystal planes.

本文言語英語
ページ(範囲)1197-1203
ページ数7
ジャーナルJournal of Physical Chemistry C
117
2
DOI
出版ステータス出版済み - 1 17 2013
外部発表はい

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • エネルギー(全般)
  • 物理化学および理論化学
  • 表面、皮膜および薄膜

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