Crystal quality evaluation of 6H-SiC layers grown by liquid phase epitaxy around micropipes using micro-Raman scattering spectroscopy

T. Ujihara, S. Munetoh, K. Kusunoki, K. Kamei, N. Usami, K. Fujiwara, G. Sazaki, K. Nakajima

研究成果: Contribution to journalConference article

6 引用 (Scopus)

抜粋

We performed homoepitaxial growth of 6H-SiC layers on substrates including micropipes by the LPE method and evaluated the crystal quality by Raman scattering spectroscopy. In particular, we focused on the crystal quality of layers covering micropipes. It was made clear that there is no stress due to morphological macroscopic defects in the crystal over micropipes. Moreover, LPE growth not only closes a micropipe but also reduces the inhomogeneity of carrier density which exists in the area of the micropipe before growth.

元の言語英語
ページ(範囲)633-636
ページ数4
ジャーナルMaterials Science Forum
457-460
発行部数I
DOI
出版物ステータス出版済み - 1 1 2004
イベントProceedings of the 10th International Conference on Silicon Carbide and Related Materials, ICSCRM 2003 - Lyon, フランス
継続期間: 10 5 200310 10 2003

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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