Crystal structure and ferroelectric property of tungsten-substituted Bi4Ti3O12 thin films prepared by metal-organic chemical vapor deposition

Tomohiro Sakai, Takayuki Watanabe, Minoru Osada, Masato Kakihana, Yuji Noguchi, Masaru Miyayama, Hiroshi Funakubo

研究成果: ジャーナルへの寄稿記事

29 引用 (Scopus)

抄録

W-substituted Bi4Ti3O12 (BIT), Bi4(Ti3-xWx)O12, films were prepared on (111)Pt/IrO2/SiO2/Si substrates at 600°C by metalorganic chemical vapor deposition (MOCVD). The degree of (117) orientation and the lattice spacing of 117 Bi4(Ti3-xWx)O12 increased with increasing W content up to x = 0.25. Ferroelectricity was hardly observed in as-deposited films but confirmed in the films after annealing at 700° C. The coercive field (Ec) monotonically increased with increasing W content, but the remanent polarization (Pr) showed a maximum value at x = 0.11. PT and Ec of Bi4(Ti2.89W0.11)O12 thin film after heat treatment was 13 μC/cm2 and 160kV/cm, respectively. W-substituted films showed high fatigue resistance against continuous switching up to 8 × 1010 cycles. These results show that W substitution for BIT film is effective in improving the ferroelectricity.

元の言語英語
ページ(範囲)2850-2852
ページ数3
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
42
発行部数5 A
出版物ステータス出版済み - 5 1 2003
外部発表Yes

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Organic chemicals
Ferroelectric materials
metalorganic chemical vapor deposition
Tungsten
Chemical vapor deposition
tungsten
Crystal structure
Thin films
crystal structure
thin films
Ferroelectricity
Metals
ferroelectricity
Remanence
Metallorganic chemical vapor deposition
heat treatment
Substitution reactions
Heat treatment
spacing
Fatigue of materials

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

これを引用

Crystal structure and ferroelectric property of tungsten-substituted Bi4Ti3O12 thin films prepared by metal-organic chemical vapor deposition. / Sakai, Tomohiro; Watanabe, Takayuki; Osada, Minoru; Kakihana, Masato; Noguchi, Yuji; Miyayama, Masaru; Funakubo, Hiroshi.

:: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 巻 42, 番号 5 A, 01.05.2003, p. 2850-2852.

研究成果: ジャーナルへの寄稿記事

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abstract = "W-substituted Bi4Ti3O12 (BIT), Bi4(Ti3-xWx)O12, films were prepared on (111)Pt/IrO2/SiO2/Si substrates at 600°C by metalorganic chemical vapor deposition (MOCVD). The degree of (117) orientation and the lattice spacing of 117 Bi4(Ti3-xWx)O12 increased with increasing W content up to x = 0.25. Ferroelectricity was hardly observed in as-deposited films but confirmed in the films after annealing at 700° C. The coercive field (Ec) monotonically increased with increasing W content, but the remanent polarization (Pr) showed a maximum value at x = 0.11. PT and Ec of Bi4(Ti2.89W0.11)O12 thin film after heat treatment was 13 μC/cm2 and 160kV/cm, respectively. W-substituted films showed high fatigue resistance against continuous switching up to 8 × 1010 cycles. These results show that W substitution for BIT film is effective in improving the ferroelectricity.",
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T1 - Crystal structure and ferroelectric property of tungsten-substituted Bi4Ti3O12 thin films prepared by metal-organic chemical vapor deposition

AU - Sakai, Tomohiro

AU - Watanabe, Takayuki

AU - Osada, Minoru

AU - Kakihana, Masato

AU - Noguchi, Yuji

AU - Miyayama, Masaru

AU - Funakubo, Hiroshi

PY - 2003/5/1

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N2 - W-substituted Bi4Ti3O12 (BIT), Bi4(Ti3-xWx)O12, films were prepared on (111)Pt/IrO2/SiO2/Si substrates at 600°C by metalorganic chemical vapor deposition (MOCVD). The degree of (117) orientation and the lattice spacing of 117 Bi4(Ti3-xWx)O12 increased with increasing W content up to x = 0.25. Ferroelectricity was hardly observed in as-deposited films but confirmed in the films after annealing at 700° C. The coercive field (Ec) monotonically increased with increasing W content, but the remanent polarization (Pr) showed a maximum value at x = 0.11. PT and Ec of Bi4(Ti2.89W0.11)O12 thin film after heat treatment was 13 μC/cm2 and 160kV/cm, respectively. W-substituted films showed high fatigue resistance against continuous switching up to 8 × 1010 cycles. These results show that W substitution for BIT film is effective in improving the ferroelectricity.

AB - W-substituted Bi4Ti3O12 (BIT), Bi4(Ti3-xWx)O12, films were prepared on (111)Pt/IrO2/SiO2/Si substrates at 600°C by metalorganic chemical vapor deposition (MOCVD). The degree of (117) orientation and the lattice spacing of 117 Bi4(Ti3-xWx)O12 increased with increasing W content up to x = 0.25. Ferroelectricity was hardly observed in as-deposited films but confirmed in the films after annealing at 700° C. The coercive field (Ec) monotonically increased with increasing W content, but the remanent polarization (Pr) showed a maximum value at x = 0.11. PT and Ec of Bi4(Ti2.89W0.11)O12 thin film after heat treatment was 13 μC/cm2 and 160kV/cm, respectively. W-substituted films showed high fatigue resistance against continuous switching up to 8 × 1010 cycles. These results show that W substitution for BIT film is effective in improving the ferroelectricity.

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