Crystal Structure and Thermoelectric Properties of Lightly Vanadium-Substituted Higher Manganese Silicides (Mn1−xVx)Siγ)

Yuzuru Miyazaki, Haruki Hamada, Kei Hayashi, Kunio Yubuta

研究成果: Contribution to journalArticle査読

16 被引用数 (Scopus)

抄録

To further enhance the thermoelectric (TE) properties of higher manganese silicides (HMSs), dissipation of layered precipitates of MnSi phase as well as optimization of hole carrier concentration are critical. We have prepared a lightly vanadium-substituted solid solution of HMS, (Mn1−xVx)Siγ, by a melt growth method. A 2% substitution of manganese with vanadium is found to dissipate MnSi precipitates effectively, resulting in a substantial increase in the electrical conductivity from 280 S/cm to 706 S/cm at 800 K. The resulting TE power factor reaches 2.4 mW/K2-m at 800 K, more than twice that of the V-free sample. The total thermal conductivity did not change significantly with increasing x owing to a reduction of the lattice contribution. As a consequence, the dimensionless figure of merit zT of the melt-grown samples increased from 0.26 ± 0.01 for x = 0 to 0.59 ± 0.01 for x = 0.02 at around 800 K.

本文言語英語
ページ(範囲)2705-2709
ページ数5
ジャーナルJournal of Electronic Materials
46
5
DOI
出版ステータス出版済み - 5 1 2017
外部発表はい

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

フィンガープリント

「Crystal Structure and Thermoelectric Properties of Lightly Vanadium-Substituted Higher Manganese Silicides (Mn<sub>1−x</sub>V<sub>x</sub>)Si<sub>γ</sub>)」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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