TY - JOUR
T1 - Crystalline GaSb nanowires synthesized on amorphous substrates
T2 - From the formation mechanism to p-channel transistor applications
AU - Yang, Zai Xing
AU - Wang, Fengyun
AU - Han, Ning
AU - Lin, Hao
AU - Cheung, Ho Yuen
AU - Fang, Ming
AU - Yip, Senpo
AU - Hung, Takfu
AU - Wong, Chun Yuen
AU - Ho, Johnny C.
PY - 2013/11/13
Y1 - 2013/11/13
N2 - In recent years, because of the narrow direct bandgap and outstanding carrier mobility, GaSb nanowires (NWs) have been extensively explored for various electronics and optoelectronics. Importantly, these p-channel nanowires can be potentially integrated with n-type InSb, InAs, or InGaAs NW devices via different NW transfer techniques to facilitate the III-V CMOS technology. However, until now, there have been very few works focusing on the electronic transport properties of GaSb NWs. Here, we successfully demonstrate the synthesis of crystalline, stoichiometric, and dense GaSb NWs on amorphous substrates, instead of the commonly used III-V crystalline substrates, InAs, or GaAs NW stems as others reported. The obtained NWs are found to grow via the VLS mechanism with a narrow distribution of diameter (220 ± 50 nm) uniformly along the entire NW length (>10 μm) with minimal tapering and surface coating. Notably, when configured into FETs, the NWs exhibit respectable electrical characteristics with the peak hole mobility of ∼30 cm2 V-1 s-1 and free hole concentration of ∼9.7 × 1017 cm-3. All these have illustrated the promising potency of such NWs directly grown on amorphous substrates for various technological applications, as compared with the conventional MOCVD-grown GaSb NWs.
AB - In recent years, because of the narrow direct bandgap and outstanding carrier mobility, GaSb nanowires (NWs) have been extensively explored for various electronics and optoelectronics. Importantly, these p-channel nanowires can be potentially integrated with n-type InSb, InAs, or InGaAs NW devices via different NW transfer techniques to facilitate the III-V CMOS technology. However, until now, there have been very few works focusing on the electronic transport properties of GaSb NWs. Here, we successfully demonstrate the synthesis of crystalline, stoichiometric, and dense GaSb NWs on amorphous substrates, instead of the commonly used III-V crystalline substrates, InAs, or GaAs NW stems as others reported. The obtained NWs are found to grow via the VLS mechanism with a narrow distribution of diameter (220 ± 50 nm) uniformly along the entire NW length (>10 μm) with minimal tapering and surface coating. Notably, when configured into FETs, the NWs exhibit respectable electrical characteristics with the peak hole mobility of ∼30 cm2 V-1 s-1 and free hole concentration of ∼9.7 × 1017 cm-3. All these have illustrated the promising potency of such NWs directly grown on amorphous substrates for various technological applications, as compared with the conventional MOCVD-grown GaSb NWs.
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U2 - 10.1021/am403161t
DO - 10.1021/am403161t
M3 - Article
C2 - 24107082
AN - SCOPUS:84887577364
VL - 5
SP - 10946
EP - 10952
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
SN - 1944-8244
IS - 21
ER -