Crystalline-structural evaluations of cubic AlN thin films heteroepitaxially grown on sapphire (0001) by pulsed laser deposition

Yutaro Ueda, Takeshi Daio, Tomohiro Yoshida, Hiroshi Akamine, Aki Tominaga, Toshihiro Okajima, Tsuyoshi Yoshitake

研究成果: Contribution to journalArticle査読

1 被引用数 (Scopus)

抄録

Cubic β-AlN thin films with different thicknesses were grown on sapphire (0001) in nitrogen atmosphere by pulsed laser deposition with sintered AlN targets, and their film structures were evaluated by transmission electron microscopy (TEM) and X-ray diffraction (XRD). It was found that β-AlN layers with a lattice constant of 7.89 A are epitaxially grown on sapphire (0001) with a relationship of β-AlN(111)[111̄]|| Al2O 3(0001)[11̄00] at film thicknesses of less than 20 nm, and at larger thicknesses, polycrystalline β-AlN grains are grown on the epitaxial β-AlN layers in the Stranski-Krastanov (SK) mode.

本文言語英語
論文番号08JE03
ジャーナルJapanese journal of applied physics
52
8 PART 2
DOI
出版ステータス出版済み - 8 2013

All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(全般)

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