Crystallization mechanism of a-Si and a-Ge by soft X-ray irradiation

Shota Kino, Akira Heya, Yuki Nonomura, Naoto Matsuo, Kazuhiro Kanda, Shuji Miyamoto, Sho Amano, Takayasu Mochizuki, Kaoru Toko, Taizoh Sadoh, Masanobu Miyao

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

We investigated a low-temperature crystallization of a- Si and a-Ge films by the synchrotron radiation soft X-ray irradiation at storage-ring current of 25-220 mA. It is found that the crystallization temperatures of a-Si and a-Ge were decreased from 680 to 580°C and from 500 to 390°C. These decreasements relate effects of enhancement atomic migration via electron excitation at valence band and core level.

本文言語英語
ホスト出版物のタイトルProceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012
ページ223-226
ページ数4
出版ステータス出版済み - 10 31 2012
イベント19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012 - Kyoto, 日本
継続期間: 7 4 20127 6 2012

出版物シリーズ

名前Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012

その他

その他19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012
Country日本
CityKyoto
Period7/4/127/6/12

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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