Crystallization mechanism of thick a-Si 0.5Ge 0.5 film by excimer laser annealing

Shota Kino, Yuki Nonomura, Akira Heya, Naoto Matsuo, Kazuhiro Kanda, Shuji Miyamoto, Sho Amano, Takayasu Mochizuki, Kaoru Toko, Taizoh Sadoh, Masanobu Miyao

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抜粋

We investigated crystallization mechanism of a-Si 0.5Ge 0.5 film by excimer-laser annealing (ELA) at energy density of 50-70mJ/cm 2 in comparison with a method of synchrotron radiation soft X-ray irradiation at storage ring current of 50-220 mA. The nucleation mechanism of Si 0.5Ge 0.5 via ELA will be discussed by considering the soft X-ray method.

元の言語英語
ホスト出版物のタイトルIMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai
ページ98-99
ページ数2
DOI
出版物ステータス出版済み - 7 30 2012
イベント10th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2012 - Osaka, 日本
継続期間: 5 9 20125 11 2012

出版物シリーズ

名前IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai

その他

その他10th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2012
日本
Osaka
期間5/9/125/11/12

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

フィンガープリント Crystallization mechanism of thick a-Si <sub>0.5</sub>Ge <sub>0.5</sub> film by excimer laser annealing' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用

    Kino, S., Nonomura, Y., Heya, A., Matsuo, N., Kanda, K., Miyamoto, S., Amano, S., Mochizuki, T., Toko, K., Sadoh, T., & Miyao, M. (2012). Crystallization mechanism of thick a-Si 0.5Ge 0.5 film by excimer laser annealing. : IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai (pp. 98-99). [6218600] (IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai). https://doi.org/10.1109/IMFEDK.2012.6218600