Crystallization processes of amorphous Si during excimer laser annealing in complete-melting and near-complete-melting conditions: A molecular dynamics study

Tomohiko Ogata, Takanori Mitani, Shinji Munetoh, Teruaki Motooka

研究成果: 著書/レポートタイプへの貢献会議での発言

抄録

We investigated crystallization processes of amorphous Si (a-Si) during the excimer laser annealing in the complete-melting and near-complete-melting conditions by using molecular dynamics simulations. The initial a-Si configuration was prepared by quenching liquid Si (l-Si) in a MD cell with a size of 50 × 50 × 150 Å3 composed of 18666 atoms. KrF excimer laser (wavelength: 248nm) annealing processes of a-Si were calculated by taking account of the change in the optical constant upon melting during a laser pulse shot with the intensity Io exp[-(t-t 0)22](Io: laser fluence, t: irradiation time). The refractive indices of a-Si and l-Si were set at n+ik=1.0+3.0i and n+ik=1.8+3.0i, respectively. The simulated results well reproduced the observed melting rate and the near-complete-melting and complete-melting conditions were obtained for Io - 160mJ/cm 2 and 180mJ/cm2, respectively. It was found that larger grains were obtained in the near-complete-melting condition. Our MD simulations also suggest that nucleation occurs first in a-Si and subsequent crystallization proceeds toward l-Si in the near-complete-melting case.

元の言語英語
ホスト出版物のタイトルMaterials Research Society Symposium Proceedings - Artificially Induced Grain Alignment in Thin Films
ページ179-183
ページ数5
出版物ステータス出版済み - 12 1 2009
イベント2008 MRS Fall Meeting - Boston, MA, 米国
継続期間: 12 2 200812 4 2008

出版物シリーズ

名前Materials Research Society Symposium Proceedings
1150
ISSN(印刷物)0272-9172

その他

その他2008 MRS Fall Meeting
米国
Boston, MA
期間12/2/0812/4/08

Fingerprint

laser annealing
Excimer lasers
Crystallization
excimer lasers
Molecular dynamics
Melting
melting
Annealing
crystallization
molecular dynamics
Io
Liquids
liquids
Optical constants
shot
lasers
Quenching
Laser pulses
Refractive index
fluence

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

これを引用

Ogata, T., Mitani, T., Munetoh, S., & Motooka, T. (2009). Crystallization processes of amorphous Si during excimer laser annealing in complete-melting and near-complete-melting conditions: A molecular dynamics study. : Materials Research Society Symposium Proceedings - Artificially Induced Grain Alignment in Thin Films (pp. 179-183). (Materials Research Society Symposium Proceedings; 巻数 1150).

Crystallization processes of amorphous Si during excimer laser annealing in complete-melting and near-complete-melting conditions : A molecular dynamics study. / Ogata, Tomohiko; Mitani, Takanori; Munetoh, Shinji; Motooka, Teruaki.

Materials Research Society Symposium Proceedings - Artificially Induced Grain Alignment in Thin Films. 2009. p. 179-183 (Materials Research Society Symposium Proceedings; 巻 1150).

研究成果: 著書/レポートタイプへの貢献会議での発言

Ogata, T, Mitani, T, Munetoh, S & Motooka, T 2009, Crystallization processes of amorphous Si during excimer laser annealing in complete-melting and near-complete-melting conditions: A molecular dynamics study. : Materials Research Society Symposium Proceedings - Artificially Induced Grain Alignment in Thin Films. Materials Research Society Symposium Proceedings, 巻. 1150, pp. 179-183, 2008 MRS Fall Meeting, Boston, MA, 米国, 12/2/08.
Ogata T, Mitani T, Munetoh S, Motooka T. Crystallization processes of amorphous Si during excimer laser annealing in complete-melting and near-complete-melting conditions: A molecular dynamics study. : Materials Research Society Symposium Proceedings - Artificially Induced Grain Alignment in Thin Films. 2009. p. 179-183. (Materials Research Society Symposium Proceedings).
Ogata, Tomohiko ; Mitani, Takanori ; Munetoh, Shinji ; Motooka, Teruaki. / Crystallization processes of amorphous Si during excimer laser annealing in complete-melting and near-complete-melting conditions : A molecular dynamics study. Materials Research Society Symposium Proceedings - Artificially Induced Grain Alignment in Thin Films. 2009. pp. 179-183 (Materials Research Society Symposium Proceedings).
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abstract = "We investigated crystallization processes of amorphous Si (a-Si) during the excimer laser annealing in the complete-melting and near-complete-melting conditions by using molecular dynamics simulations. The initial a-Si configuration was prepared by quenching liquid Si (l-Si) in a MD cell with a size of 50 × 50 × 150 {\AA}3 composed of 18666 atoms. KrF excimer laser (wavelength: 248nm) annealing processes of a-Si were calculated by taking account of the change in the optical constant upon melting during a laser pulse shot with the intensity Io exp[-(t-t 0)2/σ2](Io: laser fluence, t: irradiation time). The refractive indices of a-Si and l-Si were set at n+ik=1.0+3.0i and n+ik=1.8+3.0i, respectively. The simulated results well reproduced the observed melting rate and the near-complete-melting and complete-melting conditions were obtained for Io - 160mJ/cm 2 and 180mJ/cm2, respectively. It was found that larger grains were obtained in the near-complete-melting condition. Our MD simulations also suggest that nucleation occurs first in a-Si and subsequent crystallization proceeds toward l-Si in the near-complete-melting case.",
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