Crystallization to polycrystalline silicon films by underwater laser annealing and its application to thin film transistors

Emi Machida, Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka, Hiroshi Ikenoue

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

We performed crystallization of an amorphous silicon by laser irradiation in flowing deionized-water where Nd: YAG THG laser (wave length = 355 nm) was used for annealing. As the results, we demonstrated that the underwater laser annealing (WLA) leads to giant- and uniform-grain growth as compared to laser annealing in air (LA). It is thought that the homogenization of the temperature distribution within the Si films enhances grain growth. In addition, we successfully fabricated the poly-Si TFTs with the use of WLA poly-Si as the channel layer. The output and the transfer characteristics were clearly obtained, and thus we succeeded in the TFT operation.

本文言語英語
ホスト出版物のタイトルProceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012
ページ111-114
ページ数4
出版ステータス出版済み - 10 31 2012
イベント19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012 - Kyoto, 日本
継続期間: 7 4 20127 6 2012

出版物シリーズ

名前Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012

その他

その他19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012
Country日本
CityKyoto
Period7/4/127/6/12

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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