Crystallization to polycrystalline silicon thin film and simultaneous inactivation of electrical defects by underwater laser annealing

Emi Machida, Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka, Hiroshi Ikenoue

研究成果: Contribution to journalArticle

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抜粋

We propose a low-temperature laser annealing method of a underwater laser annealing (WLA) for polycrystalline silicon (poly-Si) films. We performed crystallization to poly-Si films by laser irradiation in flowing deionized-water where KrF excimer laser was used for annealing. We demonstrated that the maximum value of maximum grain size of WLA samples was 1.5 μm, and that of the average grain size was 2.8 times larger than that of conventional laser annealing in air (LA) samples. Moreover, WLA forms poly-Si films which show lower conductivity and larger carrier life time attributed to fewer electrical defects as compared to LA poly-Si films.

元の言語英語
記事番号252106
ジャーナルApplied Physics Letters
101
発行部数25
DOI
出版物ステータス出版済み - 12 17 2012

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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