CSTBT™ technology for high voltage applications with high dynamic robustness and low overall loss

Katsumi Nakamura, Ze Chen, Shin ichi Nishizawa, Akihiko Furukawa

研究成果: ジャーナルへの寄稿学術誌査読

1 被引用数 (Scopus)

抄録

This paper discusses the edge termination design of high-voltage insulated gate bipolar transistors with large current turn-off switching operation. We discovered that the phenomena of current crowding and impact ionization act as separated heat sources and induce one local hot spot that causes thermal destruction in the edge termination during the turn-off switching period. Optimizing the backside hole injection efficiency and relaxing the electric field of the surface pn junction edge at the edge termination region prevent the above problems. These concepts benefit the dynamic ruggedness under hard-switching conditions. This paper presents our novel edge termination design that achieves robust turn-off capability without deteriorating other performances of the device.

本文言語英語
論文番号113635
ジャーナルMicroelectronics Reliability
110
DOI
出版ステータス出版済み - 7月 2020

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学
  • 安全性、リスク、信頼性、品質管理
  • 凝縮系物理学
  • 表面、皮膜および薄膜
  • 電子工学および電気工学

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