Cu filling characteristics in through-Si via holes by electroless plating with addition of inhibitors

F. Inoue, M. Koyanagi, T. Fukushima, K. Yamamoto, S. Tanaka, Z. Wang, S. Shingubara

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

In order to realize low resistance through-Si via (TSV) electrodes, Cu electroplating is one of the most promising methods. However, with an increase of the aspect ratio of TSV, a formation of conductive seed layer prior to Cu electroplating is becoming more and more difficult. We propose an alternative approach using the electroless plating of Cu, which utilize displacement plating without catalyst. This method is effective for fabricating a low resistance TSV when combined with a barrier layer which is composed of tungsten (W). We found that an addition of Cl ions drastically suppressed the pinch-off at the entrance of the TSV, and it enabled conformai Cu deposition for high aspect ratio TSVs.

本文言語英語
ホスト出版物のタイトルECS Transactions - Electronics Packaging 3 - 214th ECS Meeting
ページ27-32
ページ数6
22
DOI
出版ステータス出版済み - 11 23 2009
外部発表はい
イベントElectronics Packaging 3 - 214th ECS Meeting - Honolulu, HI, 米国
継続期間: 10 12 200810 17 2008

出版物シリーズ

名前ECS Transactions
番号22
16
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

その他

その他Electronics Packaging 3 - 214th ECS Meeting
国/地域米国
CityHonolulu, HI
Period10/12/0810/17/08

All Science Journal Classification (ASJC) codes

  • 工学(全般)

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