TY - GEN
T1 - Cubic boron nitride thin films prepared by ion-beam assisted pulsed Nd:YAG laser deposition
AU - Suda, Yoshiaki
AU - Kawasaki, Hiroharu
AU - Doi, Kazuya
AU - Namba, Jun
AU - Nakazono, Takeshi
AU - Ohshima, Tamiko
N1 - Copyright:
Copyright 2010 Elsevier B.V., All rights reserved.
PY - 2000
Y1 - 2000
N2 - Cubic boron nitride (cBN) thin films are synthesized on Si(100) substrates by a pulsed Neodymium: Yttrium-Aluminum-Garnet (Nd:YAG) laser deposition method using an ion beam in order to enhance the synthesis of the cBN phase. The deposited films were characterized by a Fourier transform infrared (FT-IR) measurement method. When argon mixed nitrogen gas was used, there are clear three absorption peaks for hBN at 1370 cm-1 and 800 cm-1, and the absorption for cBN at 1050 cm-1. With increasing ion beam current and ion beam voltage, the peaks for hBN decrease. However, the peak for cBN does not decrease. These results suggest that nitrogen and argon ion bombardment plays an important role in the formation of cBN films.
AB - Cubic boron nitride (cBN) thin films are synthesized on Si(100) substrates by a pulsed Neodymium: Yttrium-Aluminum-Garnet (Nd:YAG) laser deposition method using an ion beam in order to enhance the synthesis of the cBN phase. The deposited films were characterized by a Fourier transform infrared (FT-IR) measurement method. When argon mixed nitrogen gas was used, there are clear three absorption peaks for hBN at 1370 cm-1 and 800 cm-1, and the absorption for cBN at 1050 cm-1. With increasing ion beam current and ion beam voltage, the peaks for hBN decrease. However, the peak for cBN does not decrease. These results suggest that nitrogen and argon ion bombardment plays an important role in the formation of cBN films.
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U2 - 10.1109/.2000.924271
DO - 10.1109/.2000.924271
M3 - Conference contribution
AN - SCOPUS:78649836224
SN - 0780364627
SN - 9780780364622
T3 - Proceedings of the International Conference on Ion Implantation Technology
SP - 785
EP - 788
BT - 2000 International Conference on Ion Implantation Technology, IIT 2000 - Proceedings
T2 - 2000 13th International Conference on Ion Implantation Technology, IIT 2000
Y2 - 17 September 2000 through 22 September 2000
ER -