Current-driven insulator-conductor transition and nonvolatile memory in chromium-doped SrTiO3 single crystals

Y. Watanabe, J. G. Bednorz, A. Bietsch, Ch Gerber, D. Widmer, A. Beck, S. J. Wind

研究成果: ジャーナルへの寄稿学術誌査読

500 被引用数 (Scopus)

抄録

Materials showing reversible resistive switching are attractive for today's semiconductor technology with its wide interest in nonvolatile random-access memories. In doped SrTiO3 single crystals, we found a dc-current-induced reversible insulator-conductor transition with resistance changes of up to five orders of magnitude. This conducting state allows extremely reproducible switching between different impedance states by current pulses with a performance required for nonvolatile memories. The results indicate a type of charge-induced bulk electronic change as a prerequisite for the memory effect, scaling down to nanometer-range electrode sizes in thin films.

本文言語英語
ページ(範囲)3738-3740
ページ数3
ジャーナルApplied Physics Letters
78
23
DOI
出版ステータス出版済み - 6月 4 2001
外部発表はい

!!!All Science Journal Classification (ASJC) codes

  • 物理学および天文学(その他)

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