Current-source a-Si: H thin-film transistor circuit for active-matrix organic light-emitting displays

Yi He, Reiji Hattori, Jerzy Kanicki

研究成果: ジャーナルへの寄稿記事

83 引用 (Scopus)

抄録

In this letter, we describe a four thin-film-transistor (TFT) circuit based on hydrogenated amorphous silicon (a-Si:H) technology. This circuit can provide a constant output current level and can be automatically adjusted for TFT threshold voltage variations. The experimental results indicated that, for TFT threshold voltage shift as large as approximately 3 V, the output current variations can be less than 1 and 5% for high (≥0.5 μA) and low (≤0.1 μA) current levels, respectively. This circuit can potentially be used for the active-matrix organic light-emitting displays (AM-OLEDs).

元の言語英語
ページ(範囲)590-592
ページ数3
ジャーナルIEEE Electron Device Letters
21
発行部数12
DOI
出版物ステータス出版済み - 12 1 2000

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Thin film transistors
Display devices
Threshold voltage
Networks (circuits)
Amorphous silicon

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

これを引用

Current-source a-Si : H thin-film transistor circuit for active-matrix organic light-emitting displays. / He, Yi; Hattori, Reiji; Kanicki, Jerzy.

:: IEEE Electron Device Letters, 巻 21, 番号 12, 01.12.2000, p. 590-592.

研究成果: ジャーナルへの寄稿記事

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