Current transport mechanism of n-type nanocrystalline FeSi2/intrinsic si/p-type si heterojunctions fabricated by facing-targets direct-current sputtering

Nathaporn Promros, Suguru Funasaki, Ryuhei Iwasaki, Tsuyoshi Yoshitake

    研究成果: 著書/レポートタイプへの貢献会議での発言

    抄録

    N-Type nanocrystalline FeSi2/intrinsic Si/p-type Si heterojunctions were successfully fabricated by FTDCS and their forward current-voltage characteristics at low temperatures were analyzed on the basis of thermionic emission theory. The analysis of J-V characteristics exhibits an increase in the ideality factor and a decrease in the barrier height at low temperatures. The values of ideality factor were estimated to be 2.26 at 300 K and 9.29 at 77 K. The temperature dependent ideality factor together with the constant value of parameter A indicated that a trap assisted multistep tunneling process is the dominant carrier transport mechanism in this heterojunction. At high voltages, the current transport mechanism is dominated by SCLC process.

    元の言語英語
    ホスト出版物のタイトルAdvances in Material Science and Technology
    ページ199-203
    ページ数5
    DOI
    出版物ステータス出版済み - 10 29 2013
    イベントInternational Conference on Engineering, Applied Sciences, and Technology, ICEAST 2013 - Bangkok, タイ
    継続期間: 8 21 20138 24 2013

    出版物シリーズ

    名前Advanced Materials Research
    802
    ISSN(印刷物)1022-6680

    その他

    その他International Conference on Engineering, Applied Sciences, and Technology, ICEAST 2013
    タイ
    Bangkok
    期間8/21/138/24/13

    Fingerprint

    Facings
    Sputtering
    Heterojunctions
    Thermionic emission
    Carrier transport
    Current voltage characteristics
    Temperature
    Electric potential

    All Science Journal Classification (ASJC) codes

    • Engineering(all)

    これを引用

    Promros, N., Funasaki, S., Iwasaki, R., & Yoshitake, T. (2013). Current transport mechanism of n-type nanocrystalline FeSi2/intrinsic si/p-type si heterojunctions fabricated by facing-targets direct-current sputtering. : Advances in Material Science and Technology (pp. 199-203). (Advanced Materials Research; 巻数 802). https://doi.org/10.4028/www.scientific.net/AMR.802.199

    Current transport mechanism of n-type nanocrystalline FeSi2/intrinsic si/p-type si heterojunctions fabricated by facing-targets direct-current sputtering. / Promros, Nathaporn; Funasaki, Suguru; Iwasaki, Ryuhei; Yoshitake, Tsuyoshi.

    Advances in Material Science and Technology. 2013. p. 199-203 (Advanced Materials Research; 巻 802).

    研究成果: 著書/レポートタイプへの貢献会議での発言

    Promros, N, Funasaki, S, Iwasaki, R & Yoshitake, T 2013, Current transport mechanism of n-type nanocrystalline FeSi2/intrinsic si/p-type si heterojunctions fabricated by facing-targets direct-current sputtering. : Advances in Material Science and Technology. Advanced Materials Research, 巻. 802, pp. 199-203, International Conference on Engineering, Applied Sciences, and Technology, ICEAST 2013, Bangkok, タイ, 8/21/13. https://doi.org/10.4028/www.scientific.net/AMR.802.199
    Promros, Nathaporn ; Funasaki, Suguru ; Iwasaki, Ryuhei ; Yoshitake, Tsuyoshi. / Current transport mechanism of n-type nanocrystalline FeSi2/intrinsic si/p-type si heterojunctions fabricated by facing-targets direct-current sputtering. Advances in Material Science and Technology. 2013. pp. 199-203 (Advanced Materials Research).
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    abstract = "N-Type nanocrystalline FeSi2/intrinsic Si/p-type Si heterojunctions were successfully fabricated by FTDCS and their forward current-voltage characteristics at low temperatures were analyzed on the basis of thermionic emission theory. The analysis of J-V characteristics exhibits an increase in the ideality factor and a decrease in the barrier height at low temperatures. The values of ideality factor were estimated to be 2.26 at 300 K and 9.29 at 77 K. The temperature dependent ideality factor together with the constant value of parameter A indicated that a trap assisted multistep tunneling process is the dominant carrier transport mechanism in this heterojunction. At high voltages, the current transport mechanism is dominated by SCLC process.",
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    AU - Funasaki, Suguru

    AU - Iwasaki, Ryuhei

    AU - Yoshitake, Tsuyoshi

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