Current-voltage characteristic of alumina and aluminum nitride with or without electron irradiation

K. Shiiyama, M. M.R. Howlader, Y. Izumi, M. Kutsuwada, S. Matsumura, C. Kinoshita

研究成果: ジャーナルへの寄稿学術誌査読

2 被引用数 (Scopus)

抄録

The current-voltage (I-V) characteristics of single- and poly-crystal alumina and aluminum nitride (A1N) were measured at temperatures ranging from room temperature to 723 K with or without 1 MeV electron irradiation in a high voltage electron microscope (HVEM). Both alumina and A1N specimens exhibit non-ohmic I-V characteristics without irradiation. The I-V characteristics in alumina, however, change from non-ohmic to almost ohmic under electron irradiation. But the I-V characteristics in A1N is still non-ohmic under irradiation. There are remarkable differences in I-V characteristics between the alumina and A1N specimens. The non-ohmic behavior is due to the electronic barrier formed near the interface between the titanium electrode and the alumina or A1N specimen. No bulk and surface radiation induced electrical degradation (RIED) was found in A1N up to 1.5 × 10-5 dpa.

本文言語英語
ページ(範囲)912-916
ページ数5
ジャーナルJournal of Nuclear Materials
283-287
PART II
DOI
出版ステータス出版済み - 1月 1 2000

!!!All Science Journal Classification (ASJC) codes

  • 核物理学および高エネルギー物理学
  • 材料科学(全般)
  • 原子力エネルギーおよび原子力工学

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