抄録
This work presents a morphological and structural analysis of CVD diamond growth on silicon from nanodiamond seeds covered by a 50 nm thick chromium layer. The role of carbon diffusion as well as chromium and carbon silicide formation is analyzed. The local diamond environment is investigated by scanning transmission electron microscopy in combination with electron energy-loss spectroscopy. The evolution of the diamond phase composition (sp3/sp2) is evaluated by micro-Raman spectroscopy. Raman and X-ray diffraction analysis are used to identify the interfacial phases formed during CVD growth. Based upon the observed morphological and structural evolution, a diamond growth model from nanodiamond seeds buried beneath a thin Cr layer is proposed.
本文言語 | 英語 |
---|---|
ページ(範囲) | 163-168 |
ページ数 | 6 |
ジャーナル | Diamond and Related Materials |
巻 | 64 |
DOI | |
出版ステータス | 出版済み - 4月 1 2016 |
!!!All Science Journal Classification (ASJC) codes
- 電子材料、光学材料、および磁性材料
- 化学 (全般)
- 機械工学
- 材料化学
- 電子工学および電気工学