Damage free al doping on 4H-SiC with passivation films Using XeF excimer laser irradiation in AlCl3 acid solution

T. Tsuchiya, A. Suwa, A. Ikeda, D. Nakamura, T. Asano, H. Ikenoue

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

We propose an innovative method for aluminum doping of 4H-SiC with passivation films, induced by XeF excimer laser irradiation in AlCl3 aqueous solution (28.6 wt%). A 100-nm thick Si passivation film was deposited on an n-type 4H-SiC substrate by physical vapor deposition. Using a laser beam (200 μm × 170 μm) with an irradiation fluence of 0.5.5.0 J/cm2, 1.300 shots were administered. After laser irradiation of 1.0 J/cm2 and 300 shots, an Al-Si-O compound film was formed on the SiC surface. The compound film was removed by chemical wet etching and plasma treatment. After the removal of the compound film, no irradiation damage was observed on the SiC surface. From the results of secondary ion mass spectrometry measurements, high concentration aluminum doping (about 1 × 1020/cm3 at the surface) was confirmed. The I-V characteristics of the junction between the n-type substrate and the irradiation area indicated clear rectification with a large on/off ratio of 9 decades in the range of ±10 V. When forward biased, electroluminescence phenomenon with a peak at 387 nm, corresponding to the electroluminescence of SiC's band gap, was confirmed. These results prove the achievement of Al doping of n-type SiC to p-type using laser irradiation without any damage to the SiC surface.

本文言語英語
ホスト出版物のタイトルLaser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXII
編集者Beat Neuenschwander, Tetsuya Makimura, Costas P. Grigoropoulos, Gediminas Raciukaitis
出版社SPIE
ISBN(電子版)9781510606234
DOI
出版ステータス出版済み - 2017
イベントLaser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXII 2017 - San Francisco, 米国
継続期間: 1 30 20172 2 2017

出版物シリーズ

名前Proceedings of SPIE - The International Society for Optical Engineering
10091
ISSN(印刷版)0277-786X
ISSN(電子版)1996-756X

その他

その他Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXII 2017
国/地域米国
CitySan Francisco
Period1/30/172/2/17

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • コンピュータ サイエンスの応用
  • 応用数学
  • 電子工学および電気工学

フィンガープリント

「Damage free al doping on 4H-SiC with passivation films Using XeF excimer laser irradiation in AlCl<sub>3</sub> acid solution」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル