Deep impurity levels of cobalt in silicon

Hiroshi Nakashima, Yasuo Tsumori, Tsuyoshi Miyagawa, Kimio Hashimoto

    研究成果: Contribution to journalArticle査読

    11 被引用数 (Scopus)

    抄録

    It has been believed until now that cobalt in silicon forms an acceptor level at around Ec–0.53 eV and a donor level at around Ev+0.35 eV. However, it is found that an acceptor level at Ec–(0.40±0.02)eV and a donor level at Ev+(0.23±0.01) eV are attributed to the amphoteric cobalt levels from the DLTS measurements for the samples diffused with cobalt deposited from the evaporation of a pure cobalt wire. The former levels (0.53 eV and 0.35 eV) are observed only for the samples prepared by the cobalt deposition from a tungsten filament wrapped with cobalt wire, and the tungsten contamination is regarded to be the cause of these levels.

    本文言語英語
    ページ(範囲)1395-1398
    ページ数4
    ジャーナルJapanese Journal of Applied Physics
    29
    8 R
    DOI
    出版ステータス出版済み - 8 1990

    All Science Journal Classification (ASJC) codes

    • 工学(全般)
    • 物理学および天文学(全般)

    フィンガープリント

    「Deep impurity levels of cobalt in silicon」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

    引用スタイル