Deep level of iron-hydrogen complex in silicon

T. Sadoh, K. Tsukamoto, A. Baba, D. Bai, A. Kenjo, T. Tsurushima, H. Mori, H. Nakashima

研究成果: Contribution to journalArticle査読

39 被引用数 (Scopus)

抄録

Deep levels related to iron in n-type silicon have been investigated using thermally stimulated capacitance (TSCAP) combined with minority carrier injection. The TSCAP measurement reveals two traps of EV + 0.31 and EV+0.41 eV. The trap of EV+0.41 eV is a donor due to interstitial iron. The trap of EV+0.31 eV, due to a complex of interstitial iron and hydrogen, is observed in the sample etched chemically with an acid mixture containing HF and HNO3 and annihilates after annealing at 175°C for 30 min. It is demonstrated that interstitial 3d transition metals such as vanadium, chromium, and iron tend to form complexes with hydrogen in n-type silicon, and the complexes induce donor levels below the donor levels of the isolated interstitial species. This trend is related to the interaction between the metals and hydrogen in the complexes.

本文言語英語
ページ(範囲)3828-3831
ページ数4
ジャーナルJournal of Applied Physics
82
8
DOI
出版ステータス出版済み - 10 15 1997

All Science Journal Classification (ASJC) codes

  • 物理学および天文学(全般)

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