Deep levels of chromium-hydrogen complexes in silicon

T. Sadoh, M. Watanabe, H. Nakashima, T. Tsurushima

研究成果: Contribution to journalArticle査読

32 被引用数 (Scopus)

抄録

Deep levels related to chromium in n-type silicon have been investigated using deep level transient spectroscopy (DLTS) and concentration profile measurements. The DLTS measurement reveals four electron traps of E C-0.22, EC-0.28, EC-0.45, and E C-0.54 eV in chromium-doped samples. The trap of EC-0.22 eV is a donor due to interstitial chromium. The other three traps are observed near the surface region of samples etched with an acid mixture containing HF and HNO3 and annihilate after annealing at 175°C for 30 min. The origin of these traps has been studied by isochronal annealing and various chemical treatments. It is demonstrated that the three electron traps are due to complexes of interstitial chromium and hydrogen.

本文言語英語
ページ(範囲)3978-3981
ページ数4
ジャーナルJournal of Applied Physics
75
8
DOI
出版ステータス出版済み - 1994

All Science Journal Classification (ASJC) codes

  • 物理学および天文学(全般)

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