Deep levels of vanadium- and chromium-hydrogen complexes in silicon

T. Sadoh, M. Watanabe, H. Nakashima, T. Tsurushima

研究成果: Contribution to journalConference article査読

6 被引用数 (Scopus)

抄録

Deep levels related to vanadium and chromium in n-type silicon have been studied using deep level transient spectroscopy (DLTS) and concentration profile measurements. In addition to traps due to interstitial species, an electron trap of EC-0.49 eV is observed in vanadium-doped n-type silicon, and three electron traps of EC-0.28, EC-0.45, and EC-0.54 eV are observed in chromium-doped n-type silicon by DLTS. These traps are observed only in the surface region of samples etched chemically with a mixture containing HF and HNO3 and annihilate after annealing at around 200 °C for 30 min. These traps are investigated by annealing and various chemical treatments. It is demonstrated that the traps are due to complexes ofhydrogen and interstitial vanadium or interstitial chromium.

本文言語英語
ページ(範囲)939-944
ページ数6
ジャーナルMaterials Science Forum
143-4
pt 2
出版ステータス出版済み - 1994
イベントProceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3) - Gmunden, Austria
継続期間: 7 18 19937 23 1993

All Science Journal Classification (ASJC) codes

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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